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參數(shù)資料
| 型號： | MAC321-8 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACs 20 AMPERES RMS 200 thru 800 VOLTS |
| 中文描述： | 600 V, 20 A, TRIAC, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 106K |
| 代理商： | MAC321-8 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Silicon Bidirectional Thyristors
. . . designed for full-wave ac control applications primarily in industrial environments
needing noise immunity.
Guaranteed High Commutation Voltage
dv/dt — 500 V/
μ
s Min @ TC = 25
°
C
High Blocking Voltage — VDRM to 800 V
Photo Glass Passivated Junction for Improved Power Cycling Capability and
Reliability
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125
°
C,
1/2 Sine Wave 50 to 60 Hz, Open Gate)
MAC321-4
MAC321-6
MAC321-8
MAC321-10
VDRM
200
400
600
800
Volts
Peak Gate Voltage
VGM
IT(RMS)
10
Volts
On-State Current RMS (TC = +75
°
C
Full Cycle Sine Wave 50 to 60 Hz)
20
Amp
Peak Surge Current (One Full Cycle, 60 Hz, TC = +75
°
C
preceded and followed by Rated Current)
ITSM
150
Amp
Circuit Fusing Considerations (t = 8.3 ms)
I2t
93
A2s
Peak Gate Power (TC = +75
°
C, Pulse Width = 2.0
μ
s)
Average Gate Power (TC = +75
°
C, t = 8.3 ms)
Peak Gate Current
PGM
PG(AV)
IGM
TJ
Tstg
20
Watts
0.5
Watt
2.0
Amp
Operating Junction Temperature Range
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.8
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Order this document
by MAC321/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
20 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
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