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參數(shù)資料
| 型號： | MAC9N |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACS 8.0 AMPERES RMS 400 thru 800 VOLTS |
| 中文描述： | 800 V, 8 A, TRIAC, TO-220AB |
| 封裝： | CASE 221A, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | MAC9N |
3–50
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
IDRM
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = 125
°
C
—
—
—
—
0.01
2.0
mA
ON CHARACTERISTICS
VTM
Peak On-State Voltage*
(ITM =
±
11 A Peak)
—
1.2
1.6
Volts
IGT
Continuous Gate Trigger Current (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
10
10
10
16
18
22
50
50
50
mA
IH
Hold Current
(VD = 12 V, Gate Open, Initiating Current =
±
150 mA)
—
30
50
mA
IL
Latch Current (VD = 24 V, IG = 50 mA)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–)
—
—
20
30
50
80
mA
VGT
Gate Trigger Voltage (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
Volts
DYNAMIC CHARACTERISTICS
(di/dt)c
Rate of Change of Commutating Current* See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/
μ
s,
Gate Open, TJ = 125
°
C, f = 250 Hz, No Snubber)
CL = 10
μ
F
LL = 40 mH
6.5
—
—
A/ms
dv/dt
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125
°
C)
*Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
500
—
—
V/
μ
s
Figure 1. RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMP)
125
120
115
110
105
100
8
7
6
5
4
3
2
1
0
T
°
Figure 2. On-State Power Dissipation
IT(RMS), ON-STATE CURRENT (AMP)
8
7
6
5
4
3
2
1
0
12
10
8
6
4
2
P
0
α
= 120, 90, 60, 30
°
α
= 180
°
α
= 30
°
DC
DC
180
°
120
°
90
°
60
°
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