參數(shù)資料
型號: MAD1108E3
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
封裝: ROHS COMPLIANT, PLASTIC, DIP-16
文件頁數(shù): 2/2頁
文件大?。?/td> 82K
代理商: MAD1108E3
Switching Diode Array
Steering Diode TVS Array
TM
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
MAD1108 and MAD1108e3
MAD1108,
e3
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
OUTLINE AND CIRCUIT
Supply rail (+VCC)
Microsemi
Scottsdale Division
Page 2
Copyright
2005
6-28-2005 REV L
I/O Port
GND (or -VCC)
STEERING DIODE APPLICATION
figure 1
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.740
0.780
18.80
19.81
B
0.235
0.265
5.969
6.731
C
0.120
0.140
3.048
3.556
D
0.270
0.330
6.858
8.382
E
0.320
0.380
8.128
9.652
F
0.100 BSC
2.540 BSC
G
0.015
0.021
0.381
0.533
H
0.017
0.023
0.431
0.584
I
0.140
0.160
3.556
4.064
OUTLINE
CIRCUIT CONFIGURATION
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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