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參數(shù)資料
| 型號(hào)： | MAG-725M4 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Agilent MGA-725M4 Low Noise Amplifier with Bypass Switch In Miniature Leadless Package |
| 中文描述： | 安捷倫的MGA - 725M4低噪聲放大器，具有旁路開關(guān)在微型無鉛封裝 |
| 文件頁數(shù)： | 14/21頁 |
| 文件大小： | 404K |
| 代理商： | MAG-725M4 |
of device’s ground pins results in
slightly improved performance
while decreasing potential insta-
bilities, especially at higher
frequencies. The disadvantage is
that a negative supply voltage is
required.
OUTPUT
& V
d
INPUT
V
ref
Figure 2. Gate Bias Method.
DC access to the input terminal
for applying the gate bias voltage
can be made through either a RF
or high impedance transmission
line as indicated in Figure 2.
The device current, I
d
, is deter-
mined by the voltage at V
ref
(Pin 2)
with respect to ground. A plot of
typical I
d
vs
V
ref
is shown in
Figure 3. Maximum device current
(approximately 65 mA) occurs at
V
ref
= 0.
The device current may also be
estimated from the following
equation:
V
ref
= 0.11
√
I
d
– 0.96
where I
d
is in mA and V
ref
is in
volts.
0
-0.8
10
50
40
30
20
-0.7
-0.6
-0.5
V
ref
(V)
-0.4
-0.2
-0.3
I
d
(
Figure 3. Device Current vs. V
ref
.
The gate bias method would not
normally be used unless a negative
supply voltage was readily avail-
able. For reference, this is the
method used in the characteriza-
tion test circuits shown in Figures
1 and 2 of the MGA-725M4 data
sheet.
Source Resistor Bias
The source resistor method is the
simplest way of biasing the
MGA-725M4 using a single,
positive supply voltage. This
method, shown in Figure 4, places
the RF input at DC ground and
requires both of the device
grounds to be RF bypassed.
Device current, I
d
, is determined
by the value of the source resis-
tance, R
bias
, between either Pin 1
and Pin 3 of the MGA-725M4 and
DC ground. Pin 1 and Pin 3 are
connected internally in the RFIC.
Maximum device current (ap-
proximately 65 mA) occurs for
R
bias
= 0
.
OUTPUT
& V
d
INPUT
2
4
3
1
R
bias
Figure 4. Source Resistor Bias.
A simple method recommended
for DC grounding the input
terminal is to merely add a
resistor from Pin 2 to ground, as
shown in Figure 4. The value of
the shunt R can be comparatively
high since the only voltage drop
across it is due to minute leakage
currents that in the mA range. A
value of 1k
would adequately DC
ground the input while loading the
RF signal by only 0.2 dB loss. A
plot of typical I
d
vs
R
bias
is shown
in Figure 5.
0
10
60
50
40
30
20
0
40
20
60
R
bias
(
)
80
100
140
120
I
d
(
Figure 5. Device Current vs. R
bias
.
The approximate value of the
external resistor, R
bias
, may also
be calculated from:
R
bias
= 964(1 – 0.112
√
I
d
)
I
d
where R
bias
is in ohms and I
d
is the
desired device current in mA. The
source resistor technique is the
preferred and most common
method of biasing the MGA-725M4.
Adaptive Biasing
For applications in which input
power levels vary over a wide
range, it may be useful to dynami-
cally adapt the bias of the
MGA-725M4 to match the signal
level. This involves sensing the
signal level at some point in the
system and automatically adjust-
ing the bias current of the ampli-
fier accordingly. The advantage of
adaptive biasing is conservation of
supply current (longer battery life)
by using only the amount of
current necessary to handle the
input signal without distortion.
Adaptive biasing of the
MGA-725M4 can be accomplished
by either analog or digital means.
For the analog control case, an
active current source (discrete
device or IC) is used in lieu of the
source bias resistor. For simple
digital control, electronic switches
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