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參數(shù)資料
| 型號(hào)： | MAP6KE68AE3 |
| 廠商： | MICROSEMI CORP-IRELAND |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, T-18, 2 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 320K |
| 代理商： | MAP6KE68AE3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01007 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
GRAPHS
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
10,000
P
e
a
k
P
u
ls
e
P
o
w
e
r
(P
PP
)
o
r
c
o
n
tin
u
o
u
s
P
o
w
e
r
in
P
e
rc
e
n
t
o
f
2
5
o C
R
a
ting
TL = 25
oC
50
30
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
P
PP
–
P
e
a
k
P
u
ls
e
P
o
w
e
r
–
k
W
C
–
C
a
p
a
c
it
a
n
c
e
-
P
ic
o
fa
ra
d
s
tw
– Pulse Width -
s
FIGURE 1 – Peak Pulse Power vs. Pulse Time
Test waveform parameters:
tr=10
s, tw=1000 s
FIGURE 2 – Pulse waveform for
exponential surge
TL Lead temperature °C
FIGURE 3 – Derating curve
V(BR) Breakdown Voltage - Volts
FIGURE 4 – P6KE Typical Capacitance
vs. Breakdown Voltage
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