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參數(shù)資料
| 型號： | MASW8000 |
| 英文描述： | MS3102A20-11S |
| 中文描述： | 砷化鎵單刀雙擲開關(guān)直流- 8千兆赫 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MASW8000 |
V 2.00
Handling Precautions
Pe manent damage to the MASW8000 may occur if the fo -
l owing precautions are not adhered to:
A Cleanliness — The MASW8000 should be handled in a
clean env o n m e n DO NOT attempt to clean unit after
the MASW8000 is installed.
B. Static Sensitivity — All chip handling equipment and per-
sonnel should be DC gr o u n d e d
C.Transient — Avoid instrument and power supply tra n s e n s
while bias is applied to the MASW8000. Use shielded
signal and bias cables to minimize inductive pick u p.
D. Bias —Apply voltage to either of the complementary con-
trol port A1/B2 or A2/B1 only when the other is gr o u n d e d
Neither port should be allowed to ”float”.
E G e n e al Handling — It is recommended that the
MASW8000 chip be handled along the long side of the
die with a sharp pair of bent twe e ze s. DO NOT touch the
s u ace of the chip with fingers or twe e ze s.
Mounting
The MASW8000 is back m e a zed with Pd/Ni/Au
(100/1,000/10,000) metallization. It can be die-mounted
with AuSn eutectic prefo ms or with thermally conductive
e p ox y.The package surface should be clean and flat befo e
a a c h m e n
Eutectic Die Attach:
A A 80/20 gold/tin prefo m is recommended with a wo k
s u ace temperature of approximately 255°C and a tool
t e m p e ature of 265°C.When hot 90/10 nitrogen/hy d o g e n
gas is applied, tool tip temperature should be approx -
mately 290°C.
B. DO NOT expose the MASW8000 to a tempera u e
greater than 320°C for more than 20 seconds. No more
than 30 seconds of scru bbing should be required fo
a a c h m e n
E p oxy Die Attach:
A Apply a minimum amount of epoxy and place the
MASW8000 into position. A thin epoxy fillet should be
v s ble around the perimeter of the chip.
B. Cure epoxy per manu a c u e s recommended schedule.
C. E e c ically conductive epoxy may be used but is not
r e q u e d
Wire Bonding
A Ball or wedge bond with 1.0 mil diameter pure gold wire.
T h e mosonic wirebonding with a nominal stage tempera-
ture of 150°C and a ball bonding force of 40 to 50 gra m s
or wedge bonding force of 18 to 22 grams is recommend-
e d U asonic energy and time should be adjusted to the
m n mum levels to achieve reliable wirebonds.
B. Wirebonds should be started on the chip and term n a -
ed on the pack a g e. GND bonds should be as short as
p o s s bl e at least three and no more than four bond
wires or two 3-mil ri bbons from ground pads to pack a g e
Maximum Ratings
A. Control Voltage (A1/B2 or A2/B1):–8.5 Vdc
B. Max Input RF Power:
C. Storage Temperature:
D. Max Operating Temperature:
+34 dBm
–65°C to +175°C
+175°C
BondPad Dimensions
Inches (mm)
RF:
0.004 x 0.004
(0.100 x 0.100)
RF1, RF2:
0.004 x 0.004
(0.100 x 0.100)
A1, A2, B1, B2:
0.004 x 0.004
(0.100 x 0.100)
PC1, PC2
0.004 x 0.004
(0.100 x 0.100)
GND1, GND2:
0.005 x 0.009
(0.110 x 0.225)
Truth Ta bl e
Control Inputs
Condition Of Switch
A1/B2
A2/B1
RF1
RF2
V
IN
Hi
V
IN
Low
V
IN
Low
V
IN
Hi
On
Off
Off
On
****For normal SPDT operation A1 is connected to B2 and
A2 is connected to B1.
Die Size
Inches (mm)
0.046 x 0.036 x 0.010
(1.15 x 0.90 x 0.25)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MASWSM0002 | 5.2 GHz SPDT Switch |
| MASWSM0002SMB | ER 7C 7#12 PIN RECP |
| MASWSM0002TR | AB 7C 7#12 PIN RECP |
| MASWSM0002TR-3000 | 5.2 GHz SPDT Switch |
| MASWSM0015 | DPDT Switch, 4.5 - 6.0 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MASWCC0006 | 制造商:M/A-COM Technology Solutions 功能描述:GAAS SP6T SWITCH,DC-4GHZ,ROHS VERSION OF SW90-0004A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF AND MICROWAVE SWITCH |
| MASWCC0006-TB | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:GaAs SP6T Switch, Absorptive, Single Supply DC - 4.0 GHz |
| MASWCC0006TR | 制造商:M/A-COM Technology Solutions 功能描述:RF AND MICROWAVE SWITCH |
| MASWCC0009 | 制造商:M/A-COM Technology Solutions 功能描述:RF AND MICROWAVE SWITCH |
| MASWCC0009_V7 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:GaAs SP4T Switch, Absorptive |
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