M
Low-Power, 8-Channel,
S erial 10-Bit ADC
2
_______________________________________________________________________________________
V
DD
to AGND........................................................... -0.3V to +6V
AGND to DGND.................................................... -0.3V to +0.3V
CH0–CH7 to AGND, DGND ...................... -0.3V to (V
DD
+ 0.3V)
VREF to AGND .......................................... -0.3V to (V
DD
+ 0.3V)
REFADJ to AGND...................................... -0.3V to (V
DD
+ 0.3V)
Digital Inputs to DGND.............................. -0.3V to (V
DD
+ 0.3V)
Digital Outputs to DGND........................... -0.3V to (V
DD
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
Plastic DIP (derate 11.11mW/°C above +70°C) ......... 889mW
SO (derate 10.00mW/°C above +70°C)...................... 800mW
SSOP (derate 8.00mW/°C above +70°C) ................... 640mW
CERDIP (derate 11.11mW/°C above +70°C).............. 889mW
Operating Temperature Ranges
MAX192_C_P..................................................... 0°C to +70°C
MAX192_E_P .................................................. -40°C to +85°C
MAX192_MJ P ............................................... -55°C to +125°C
Storage Temperature Range............................ -60°C to +150°C
Lead Temperature (soldering, 10sec) ............................ +300°C
ELECTRICAL CHARACTERISTICS
(V
DD
= 5V ±5%, f
CLK
= 2.0MHz, external clock (50% duty cycle), 15 clocks/conversion cycle (133ksps), 4.7μF capacitor at VREF pin,
T
A
= T
MIN
to T
MAX,
unless otherwise noted. Typical values are at T
A
= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
MAX192A
MAX192B
No missing codes over temperature
-3dB rolloff
65kHz, V
IN
= 4.096V
p-p
(Note 3)
External reference, 4.096V
External reference, 4.096V
CONDITIONS
kHz
800
Full-Power Bandwidth
CONVERSION RATE
MHz
4.5
Small-Signal Bandwidth
dB
-75
Channel-to-Channel Crosstalk
dB
70
SFDR
Spurious-Free Dynamic Range
dB
-70
THD
Total Harmonic Distortion
(up to the 5th harmonic)
dB
66
SINAD
Signal-to-Noise + Distortion Ratio
±1/2
±1
±1
±2
±2
Bits
10
Resolution
LSB
±0.1
Channel-to-Channel
Offset Matching
ppm/°C
±0.8
Gain Temperature Coefficient
LSB
Relative Accuracy (Note 2)
LSB
LSB
LSB
DNL
Differential Nonlinearity
Offset Error
Gain Error
UNITS
MIN
TYP
MAX
SYMBOL
PARAMETER
Internal clock
External clock, 2MHz, 12 clocks/conversion
5.5
6
10
Conversion Time (Note 4)
t
CONV
μs
Track/Hold Acquisition Time
Aperture Delay
Aperture J itter
Internal Clock Frequency
t
AZ
1.5
μs
ns
ps
MHz
10
<50
1.7
DC ACCURACY
(Note 1)
DYNAMIC SPECIFICATIONS
(10kHz sine-wave input, 4.096V
p-p
, 133ksps, 2.0MHz external clock)