參數(shù)資料
型號(hào): MAX3886ETN+T
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 10/17頁(yè)
文件大?。?/td> 0K
描述: IC MULTIRATE CDR SER/DES56-TQFN
標(biāo)準(zhǔn)包裝: 2,500
類型: 時(shí)鐘和數(shù)據(jù)恢復(fù)(CDR),多路復(fù)用器
PLL:
主要目的: 光纖網(wǎng)絡(luò)終端(ONT)應(yīng)用,千兆位無(wú)源光纖網(wǎng)絡(luò)(GPON),寬帶無(wú)源光纖網(wǎng)絡(luò)(BPON)
輸入: CML,LVDS,LVPECL
輸出: CML,LVDS
電路數(shù): 1
比率 - 輸入:輸出: 7:6
差分 - 輸入:輸出: 是/是
頻率 - 最大: 622MHz,2488Mbps
電源電壓: 3 V ~ 3.6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 56-WFQFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝: 56-TQFN-EP(8x8)
包裝: 帶卷 (TR)
MAX3886
Multirate CDR with Integrated Serializer/Deserializer
for GPON and BPON ONT Applications
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
OPERATING CONDITIONS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Supply Voltage Range (VCC).................................-0.3V to +4.0V
CML Input Voltage Range (SDI
±)...............-0.3V to (VCC + 0.3V)
CML Output Current (SDO
±, BENO±)...............................±22mA
LVDS Input Voltage Range
(PCKI
±, PDI[3:0]±, BENI±)......................-0.3V to (VCC + 0.3V)
LVDS Output Voltage Range
(RCKO
±, PDO[3:0]±, PCKO±) ................-0.3V to (VCC + 0.3V)
LVCMOS Input Voltage Range
(MSYM, MDDR, FRST)............................-0.3V to (VCC + 0.3V)
Three-State Input Voltage Range
(MVCO)...................................................-0.3V to (VCC + 0.3V)
LVCMOS Output Voltage Range
(LOCK, FERR) ........................................-0.3V to (VCC + 0.3V)
Voltage Range at CFIL, RFCK1,
RFCK2, TP1, TP2, TP3, TP4 ...................-0.3V to (VCC + 0.3V)
Continuous Power Dissipation (TA = +70
°C)
56-Pin TQFN (derate 47.6mW/
°C above 70°C)..........3808mW
Operating Junction Temperature Range ...........-55
°C to +150°C
Storage Temperature Range .............................-55
°C to +150°C
Lead Temperature (soldering, 10s) .................................+300
°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Temperature
TA
-40
+85
°C
Power-Supply Voltage
VCC
3.0
3.6
V
Downstream/Upstream
Data Rates
See Table 2
Gbps
Reference Frequency
Internal or external oscillator
19.4400
MHz
Crystal Accuracy
Includes aging, temperature, and other
contributors
±250
ppm
Crystal ESR
Fundamental type, AT-strip cut
10
60
Crystal Drive
100
μW
Crystal Load Capacitance
On-chip parallel capacitance
18
pF
Reference Clock Input Duty
Cycle
When driven by an LVCMOS clock source
40
60
%
ELECTRICAL CHARACTERISTICS
(VCC = +3.0V to +3.6V, TA = -40°C to +85°C. Typical values are at VCC = +3.3V, TA= +25°C, unless otherwise noted. LVDS outputs
terminated 100
Ω differential, CML inputs terminated 100Ω differential, CML outputs terminated 100Ω differential.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Current
ICC
240
310
mA
CDR/DESERIALIZER SPECIFICATIONS
MVCO = 1
2488.32
MVCO = open
1244.16
Serial Input Data Rate
Rate
MVCO = 0
622.08
Mbps
CDR CID Immunity
BER
10-10 (Note 2)
> 100
Bits
CDR Sinusoidal Jitter Tolerance
f > fC
BER
10-10 (Note 3)
0.3
0.7
UIP-P
SDI to SDO Jitter Transfer
(Notes 4, 5)
0.1
dB
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