參數(shù)資料
型號(hào)： MAX4239AUT-T
廠商： MAXIM INTEGRATED PRODUCTS INC
元件分類(lèi)： 運(yùn)動(dòng)控制電子
英文描述： Ultra-Low Offset/Drift, Low-Noise, Precision SOT23 Amplifiers
中文描述： OP-AMP, 3.5 uV OFFSET-MAX, 6.5 MHz BAND WIDTH, PDSO6
封裝： PLASTIC, MO-178AB, SOT-23, 6 PIN
文件頁(yè)數(shù)： 4/10頁(yè)
文件大小： 363K
代理商： MAX4239AUT-T
M
Ultra-Low Offset/Drift, Low-Noise,
Precision SOT23 Amplifiers
4
_______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS
(2.7V
≤
V
CC
≤
5.5V, V
CM
= GND = 0V, V
OUT
= V
CC
/2, R
L
= 10k
connected to V
CC
/2,
SHDN
= V
CC
,
T
A
= -40
°
C to +125
°
C
, unless other-
wise noted.) (Note 5)
PARAMETER
SYMBOL
CONDITIONS
T
A
= -40
°
C to +85
°
C
T
A
= -40
°
C to +125
°
C
MIN
TYP
MAX
2.5
3.5
UNITS
Input Offset Voltage
V
OS
(Note 1)
μV
Input Offset Drift
TCV
OS
(Note 1)
10
nV/
°
C
Common-Mode Input Voltage
Range
V
CM
Inferred from CMRR test
GND -
0.05
V
CC
-
1.4
V
T
A
= -40
°
C to +85
°
C
115
Common-Mode Rejection Ratio
CMRR
GN D - 0.05V
≤
V
C M
≤
V
C C
-
1.4V ( N ote 1)
T
A
= -40
°
C to +125
°
C
90
dB
Power-Supply Rejection Ratio
PSRR
2.7V
≤
V
CC
≤
5.5V (Note 1)
120
dB
T
A
= -40
°
C to +85
°
C
125
R
L
= 10k
,
0.1V
≤
V
OUT
≤
V
CC
- 0.1V
(Note 1)
T
A
= -40
°
C to +125
°
C
95
dB
0.1V
≤
V
OUT
≤
V
CC
- 0.1V,
T
A
= -40
°
C to +85
°
C
120
Large-Signal Voltage Gain
A
VOL
R
L
= 1k
(Note 1)
0.2V
≤
V
OUT
≤
V
CC
- 0.2V,
T
A
= -40
°
C to +125
°
C
V
CC
- V
OH
V
OL
V
CC
- V
OH
V
OL
80
dB
20
20
100
100
2
5.5
900
2
R
L
= 10k
Output Voltage Swing
V
OH
/V
OL
R
L
= 1k
mV
Output Leakage Current
Supply Voltage Range
0V
≤
V
OUT
≤
V
CC
,
SHDN
= GND (Note
Inferred by PSRR test
SHDN
= V
CC
, no load, V
CC
= 5.5V
SHDN
= GND, V
CC
= 5.5V
μA
V
V
CC
2.7
Supply Current
I
CC
μA
Shutdown Logic High
Shutdown Logic Low
Shutdown Input Current
V
IH
V
IL
2.2
V
V
0.7
2
0V
≤
V
SHDN
≤
V
CC
μA
Note 1
: Guaranteed by design. Thermocouple and leakage effects preclude measurement of this parameter during production
testing. Devices are screened during production testing to eliminate defective units.
Note 2
: IN+ and IN- are gates to CMOS transistors with typical input bias current of 1pA. CMOS leakage is so small that it is
impractical to test and guarantee in production. Devices are screened during production testing to eliminate defective units.
Note 3
: Leakage does not include leakage through feedback resistors.
Note 4
: Overload recovery time is the time required for the device to recover from saturation when the output has been
driven to either rail.
Note 5
: Specifications are 100% tested at T
A
= +25
°
C, unless otherwise noted. Limits over temperature are guaranteed by design.
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