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M
Low-Voltage, 2
, SPST,
CMOS Analog Switches
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to ground.)
V+, IN .......................................................................-0.3V to +6V
COM, NO, NC (Note 1).................................-0.3V to (V+ + 0.3V)
Continuous Current (IN, V+, GND) ...................................
±
30mA
Continuous Current COM, NO, NC.................................
±
160mA
Peak Current COM, NO, NC
(pulsed at 1ms, 10% duty cycle)................................
±
300mA
ELECTRICAL CHARACTERISTICS
(V+ = 2.7V to 3.6V, V
IH
= 2.0V, V
IL
= 0.4V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Continuous Power Dissipation (T
A
= +70
o
C)
5-Pin SC70 (derate 3.1mW/
o
C above +70
o
C)..............247mW
6-Pin SC70 (derate 3.1mW/
o
C above +70
o
C)..............245mW
6-Pin μDFN (derate 2.1mW/
o
C above +70
°
C)...........167.7mW
Operating Temperature Range ...........................-40
°
C to +85
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
Lead Temperature (soldering, 10s).................................+300
°
C
Junction Temperature......................................................+150°C
PARAMETER
ANALOG SWITCH
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Analog Signal Range
V
COM
,
V
NO,
V
NC
0
V+
V
T
A
= +25°C
T
A
= T
MIN
to T
MAX
T
A
= +25°C
T
A
= T
MIN
to T
MAX
T
A
= +25°C
T
A
= T
MIN
to T
MAX
T
A
= +25°C
T
A
= T
MIN
to T
MAX
T
A
= +25°C
T
A
= T
MIN
to T
MAX
2.0
3.0
3.5
0.85
0.97
+1
+2
+1
+2
+1
+2
On-Resistance
R
ON
V+ = 2.7V, I
COM
= 10mA,
V
NO
or V
NC
= 0V to V+
0.6
On-Resistance Flatness
(Note 3)
R
FLAT (ON)
V+ = 2.7V, I
COM
= 10mA,
V
NO
or V
NC
= 0V to V+
-1
-2
-1
-2
-1
-2
0.1
NO, NC Off-Leakage
Current
I
NO(OFF),
I
NC(OFF)
V+ = 3.3V, V
COM
= 1V, 3V;
V
NO
or V
NC
= 3V, 1V
nA
0.1
COM On-Leakage Current
I
COM(ON)
V+ = 3.3V, V
COM
= 1V or 3V;
V
NO
or V
NC
= 1V, 3V, or floating
nA
0.1
COM Off-Leakage Current
I
COM(OFF)
V+ = 3.3V, V
COM
= 1V or 3V;
V
NO
or V
NC
= 3V, 1V
nA
DIGITAL INPUTS
Input Logic High
Input Logic Low
Input Current
DYNAMIC
V
IH
V
IL
I
IN
2.0
V
V
0.4
+1
V
IN
= 0V or V+
-1
0.05
μA
T
A
= +25°C
T
A
= T
MIN
to T
MAX
T
A
= +25°C
T
A
= T
MIN
to T
MAX
12
20
20
15
15
Turn-On Time (Note 4)
t
ON
V
COM
= 2V, R
L
= 300
,
C
L
= 35pF, Figure 2
ns
8
Turn-Off Time (Note 4)
t
OFF
V
COM
= 2V, R
L
= 300
,
C
L
= 35pF, Figure 2
V
GEN
= 0V, R
GEN
= 0, C
L
= 1.0nF, Figure 3
ns
Charge Injection
Q
5
pC
NO, NC Off-Capacitance
C
NO(OFF)
,
C
NC(OFF)
C
ON
V
NO
, V
NC
= GND, f = 1MHz, Figure 5
17
pF
Switch On-Capacitance
V
COM
= V
NO/NC
, f = 1MHz, Figure 5
35
pF
Note 1:
Signals on NO, NC, COM, or IN exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to maxi-
mum current rating.