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參數(shù)資料
| 型號： | MAX6399 |
| 廠商： | Maxim Integrated Products, Inc. |
| 英文描述： | High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller |
| 中文描述： | 高壓、過壓/欠壓保護(hù)開關(guān)控制器 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 649K |
| 代理商： | MAX6399 |
M
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
IN, GATE, OUT.......................................................-0.3V to +80V
SHDN
.............................................................-0.3V to (IN + 0.3V)
OUT........................................................................-0.3V to +80V
GATE to OUT..........................................................-0.3V to +20V
OUT_SET, SET, POK..............................................-0.3V to +12V
Maximum Current (All pins) ................................................50mA
ELECTRICAL CHARACTERISTICS
(V
IN
= 14V; C
GATE
= 6000pF, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Continuous Power Dissipation (T
A
= +70°C)
8-Pin TDFN (derate 18.2mW/°C above +70°C) .........1455mW
Operating Temperature Range .........................-40°C to +125°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature Range................................................+300°C
PARAMETER
SYMBOL
V
IN
CONDITIONS
MIN
5.75
TYP
MAX
72.00
130
22
5.50
UNITS
V
Supply Voltage Range
SHDN
= high
SHDN
= low
V
IN
rising, enables GATE
100
10
5
IN Supply Current
I
IN
μA
IN Undervoltage Lockout
4.68
V
IN Undervoltage Lockout
Hysteresis
V
IN
falling, GATE off
155
mV
SET Threshold Voltage
SET Threshold Hysteresis
SET Input Current
Startup Response Time
V
TH (SET)
V
HYST
I
SET
t
START
With respect to GND, SET rising
0.480
0.5
5
0.517
V
% V
TH
nA
μs
-50
+50
SHDN
rising (Note 2)
100
GATE Rise Time
GATE rising from GND to V
OUT
+ 8V,
C
GATE
= 6000pF, OUT = GND
1
ms
SET to GATE Prop Delay
t
OV
SET rising from V
TH
- 100mV to
V
TH
+ 100mV
0.5
μs
V
OUT
= V
IN
= 5V, R
GATE
to IN = 1M
V
IN
+
3.6V
V
IN
+
3.8V
V
IN
+
4.0V
GATE Output-Voltage High
V
OH
V
OUT
= V
IN
; V
IN
≥
14V, R
GATE
to IN = 1M
V
IN
+
15V
V
IN
+
10V
V
IN
+
10.7V
V
GATE Output-Voltage Low
GATE Charge-Pump Current
GATE to OUT Clamp Voltage
SHDN
Logic-High Input Voltage
SHDN
Logic-Low Input Voltage
V
OL
I
GATE
V
CLMP
V
IH
V
IL
GATE sinking 20mA, V
OUT_SET
= GND
GATE = GND
0.3
V
μA
V
V
V
75
13.8
1.4
18.0
0.4
SHDN
Input Pulldown Current
V
SHDN
= 2V,
SHDN
is internally pulled
down to GND
1
μA
Thermal-Shutdown Temperature
(Note 3)
+150
°C
Thermal-Shutdown Hysteresis
POWER-OK (POK)
20
°C
OUT_SET Threshold
V
TH
(OUT_SET)
OUT_SET rising
1.205
1.23
1.258
V
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