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M
Bus LVDS 3.3V Single Transceiver
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND...........................................................-0.3V to +4.0V
DO+/RI+, DO-/RI- to GND.....................................-0.3V to +4.0V
DIN, ROUT, DE,
RE
to GND.......................-0.3V to (V
CC
+ 0.3V)
Driver Short-Circuit Current .......................................Continuous
Continuous Power Dissipation (T
A
= +70
°
C)
8-Pin SO (derate 5.9mW/
°
C above +70
°
C)..................471mW
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.0V to 3.6V,
RE
= 0,
|
V
ID
|
= 0.1V to 2.9V, common-mode input voltage (V
CM
) = |V
ID
/2| to 3.0V - |V
ID
|
/2, R
L
= 27
±1%,
T
A
= -40
°
C to +85
°
C. Typical values are at V
CC
= 3.3V,
|
V
ID
|
= 0.2V, V
CM
= 1.2V, T
A
= +25
°
C, unless otherwise noted.) (Notes 1, 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Operating Temperature Range ...........................-40
°
C to +85
°
C
Junction Temperature......................................................+150
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
ESD Protection
HBM (1.5k
, 100pF),
DO+/RI+, DO-/RI-, DIN, ROUT, DE,
RE
........................> ±2kV
Lead Temperature (soldering, 10s).................................+300
°
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SINGLE-ENDED INPUTS (DIN, DE,
RE
)
Input High Voltage
Input Low Voltage
Input Current
Input Diode Clamp Voltage
DRIVER OUTPUT (DO+/RI+, DO-/RI-)
Differential Output Voltage
V
IH
V
IL
I
IN
V
CL
2.0
0
-10
-1.5
V
CC
0.8
+10
V
V
RE
, DE, DIN = high or low
I
CLAMP
= -18mA
μA
V
V
OD
Figure 1
180
250
360
mV
Change in Magnitude of V
OD
Between
Complementary Output States
V
OD
Figure 1
0.2
25
mV
Offset Voltage
V
OS
Figure 1
1.00
1.28
1.65
V
Change in Magnitude of V
OS
Between
Complementary Output States
V
OS
Figure 1
1.4
25
mV
DO+/RI+ = 0, DIN = V
CC
DO-/RI- = 0, DIN = 0
-9
-9
-20
-20
Output Short-Circuit Current
I
OSD
mA
Output Capacitance
C
OUT
Capacitance from DO+/RI+ or DO-/RI-
to GND
6.9
pF
RECEIVER INPUT (DO+/RI+, DO-/RI-)
Differential Input High Threshold
Differential Input Low Threshold
V
TH
V
TL
DE = low
DE = low
100
mV
mV
-100
Input Current
I
IN
DE = low, V
CC
= 0 or 3.6V;
DO+/RI+, DO-/RI- = 2.4V or 0; Figure 6
-20
+20
μA
RECEIVER OUTPUT (ROUT)
V
ID
= +100mV
Inputs open
Inputs shorted
Inputs terminated, R
L
= 27
I
OL
= +2.0mA, V
ID
= -100mV, DE = low
V
ID
= +100mV, ROUT = 0, DE = low
Output High Voltage
V
OH
I
OH
= -400μA,
DE = Low
2.90
3.28
V
Output Low Voltage
Output Short-Circuit Current
V
OL
I
OS
0.025
-25
0.4
-85
V
-5
mA