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M
Quad LVDS Line Driver with High-ESD
Tolerance and Flow-Through Pinout
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND...........................................................-0.3V to +4.0V
IN_, EN,
EN
to GND....................................-1.4V to (V
CC
+ 1.4V)
OUT_ to GND ........................................................-0.3V to +4.0V
Short-Circuit Duration (OUT_)....................................Continuous
Continuous Power Dissipation (T
A
= +70
°
C)
16-Pin TSSOP (derate 9.4mW/
o
C above +70
°
C).........755mW
16-Pin QFN (derate 16.9mW/
o
C above +70
°
C).........1349mW
Storage Temperature Range.............................-65
°
C to +150
°
C
Maximum Junction Temperature .....................................+150
°
C
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +3.0V to +3.6V, R
L
= 100
±1%, IN_ = high or low, EN = high,
EN
= low, T
A
= -40
°
C to +85
°
C. Typical values are at V
CC
=
+3.3V, T
A
= +25
°
C, unless otherwise noted.) (Notes 1, 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ESD Protection
Human Body Model
All Pins to GND ............................................................
±
2kV
OUT_ ............................................................................
±
2kV
IEC 61000-4-2 Level 4
Contact Discharge (OUT_)...............................................
±
8kV
Air Discharge (OUT_).....................................................
±
15kV
Lead Temperature (soldering, 10s).................................+300
°
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
LVDS OUTPUTS (OUT_+, OUT_-)
Differential Output Voltage
V
OD
Figure 1
250
368
450
mV
Change in Magnitude of V
OD
Between Complementary Output
States
V
OD
Figure 1
0.3
25
mV
Offset Voltage
V
OS
Figure 1
1.125
1.28
1.375
V
Change in Magnitude of V
OS
Between Complementary Output
States
V
OS
Figure 1
0.3
25
mV
Output High Voltage
Output Low Voltage
V
OH
V
OL
Figure 1
Figure 1
1.6
V
V
0.90
Unterminated Output High
Voltage
V
OHUT
Output open, Figure 6
1.9
V
Unterminated Output Low
Voltage
V
OLUT
Output open, Figure 6
0.1
V
Differential Output Short-Circuit
Current Magnitude
I
OSD
V
OD
= 0 (Note 3)
9
mA
Output Short-Circuit Current
I
OS
OUT_+ = 0 at IN_ = high,
or OUT_- = 0 at IN_ = low
-9
mA
Output High-Impedance Current
I
OZ
EN = low and
EN
= high,
OUT_ = 0 or V
CC
, no load
-0.5
±0.002
+0.5
μA
Power-Off Output Current
I
OFF
V
CC
, IN_, EN,
EN
= 0 or open, OUT_ = 0 or
3.6V, no load
-0.5
±0.001
+0.5
μA
INPUTS (IN_, EN,
EN
)
High-Level Input Voltage
Low-Level Input Voltage
V
IH
V
IL
2.0
-1.0
V
CC
+ 1
+0.8
V
V