參數(shù)資料
型號(hào): MB3891
廠商: Fujitsu Limited
英文描述: Power Management IC for GSM Mobile Phone
中文描述: 電源管理IC用于GSM移動(dòng)電話
文件頁(yè)數(shù): 3/29頁(yè)
文件大小: 446K
代理商: MB3891
MB3891
3
I
PIN DESCRIPTION
(Continued)
Pin No.
Symbol
I/O
O
O
O
Descriptions
1, 2
N.C.
Non connection.
3, 4
OUT3
LDO3 output pin.
5
GND3
LDO3 ground pin.
6, 7
OUT2
LDO2 output pin.
8, 9, 10, 11
VBAT1
Battery voltage input pin for LDO1 and LDO2.
12, 13
OUT1
LDO1 output pin.
14
CONT1
I
Power on input from keypad (Active low, Pulled up to VBAT2).
“CONT6” input from digital system
μ
P (Active high).
External accessory supply voltage Enable (Active high).
15
CONT6
I
16
CONT2
I
17
XPOWERGOOD
O
Generates the main reset. (Active low, when OUT1 is out of regulation).
18
DELAYCAP
Timing capacitor for XPOWERGOOD delay.
19
GND1
LDO1, LDO2, V-BACKUP, Reference and System ground pin.
20
VBAT2
Battery voltage input pin for both UVLO’s, Reference and V-BACKUP
LDO.
21
V-BACKUP
O
Supply voltage for Charger for rechargeable Lithium coin cell.
22
VREF
O
Supply voltage for Reference.
23
VFIL
O
Reference voltage Filter.
24
REF-OUT
O
I
Reference output voltage (Present when BACKUP UVLO is high).
25
VCC-VSIM
Input voltage for charge pump. (Supplied by VBAT1).
26
VSIM-ON
VSIM supply Enable (Active high).
27
SIMPROG
I
VSIM programming: Low = 3 V SIM, High = 5 V SIM.
28
OSC
O
I
Oscillator output pin.
29
VSIMOUT
VCAP
+
VCAP
GND-VSIM
Supply voltage for 3 or 5 V SIM-Card (SmartCard).
30
Positive side of boost capacitor.
31
Negative side of boost capacitor.
32
3 or 5 V SIM-Card (SmartCard) ground pin.
Non level shifted SIM reset (
μ
P side).
Non level shifted clock (
μ
P side).
Non level shifted bi-directional data input/output (
μ
P side).
Level shifted SIM reset (SmartCard side).
33
RESET-IN
34
CLK-IN
μ
P-IO
RST
I
35
I/O
36
O
37
CLK
O
Level shifted SIM clock (SmartCard side).
38
SIM-IO
I/O
O
Level shifted bi-directional SIM data input/output (SmartCard side).
39
GND4
LDO4 ground pin.
40, 41
OUT4
LDO4 output pin.
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