
MB4138
9
2. AC Characteristics
Parameter
(Unless otherwise specified, V
CC
= 5.0V
±
10%, Ta = +25
°
C, MR head resistance RMR = 36
,
thin film head Lh = 240 nH, Rh = 15
, C1 = 0.1
μ
F, C2 = 0.1
μ
F, C3 = 0.033
μ
F, C4 = 0.033
μ
F)
Values
Symbol
Condition
Mode
Min.
100
V/V
Differential voltage
gain
G
D
Vin = 1mVpp, fin = 5 MHz
RL = 100
55
MHz
RL = 100
Vin = 1mVpp, G
D
= – 3 dB
B
W
Frequency band-
width
—
Input capacitance
C
I
—
Input conversion
noise voltage
BW = 1 to 30MHz, pin short
V
n
—
nV/
Hz
R
R
R
R
Typ.
Max.
150
75
18
0.51
220
—
—
0.69
Unit
pF
Remarks
5
mVpp
fin = 5 MHz, 3fin = – 30 dB
DR
R
—
—
Input dynamic range
Common mode
rejection ratio
Power supply
rejection ratio
Channel separation
40
dB
Vin = 100 mVpp, fin = 5 MHz
CMRR
R
—
—
40
dB
Vin = 100 mVpp, fin = 5 MHz
PSRR
R
—
—
40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.6
dB
μ
s
μ
s
ns
ns
μ
s
μ
s
μ
s
μ
s
ns
ns
μ
s
μ
s
μ
s
ns
μ
s
μ
s
Vin = 100 mVpp, fin = 5 MHz
RRC = 4.3 k
RRC = 4.3 k
RWC = 24
RWC = 24
RRC = 4.3 k, RMR = 36, RS = H
RRC = 4.3 k, RMR = 36, RS = L
RRC = 3.0 k, RMR = 53, RS = L
RRC = 4.3 k
RWC = 24
RWC = 24
RRC = 4.3 k
RRC = 4.3 k
RMR = 30
41
(at head switching)
RWC = 24
fWDX, Y = 0
→
2 MHz
fWDX, Y = 20
→
0 MHz
CSP
tdIR
R
IR
RI
IW
WI
W1R
W2R
W2R
RW
RW
RW
W1W2
W2W1
R
W
W
W
—
—
—
250
100
—
—
—
—
250
100
—
—
—
—
—
1.2
—
20
1
500
500
3.0
3.0
3.5
1
500
500
1
3
40
500
1
3.6
tWG = 1ms
For a 1ms
write time
tdRI
tdIW
tdWI
tdWRR
tdRWR
tdRWW
tdWRW
tdW12
tdW21
tdHSR
tdHSW
tdSF
tdUS
CS delay
R/W delay
HS delay
WUS delay
RS delay
Write current transi-
tion time
Transition time
difference
Write current delay
Delay time difference
Write data input
frequency
(Continued)
—
ns
RWC = 24, Lh = 240 nH, Rh = 15
tr1/tf1
W
9
—
—
ns
| tr1 – tf1 |
tpd
W
—
1
—
ns
RWC = 24, Lh = 240 nH, Rh = 15
| tpd1 – tpd2 |
W
4.5
—
—
ns
W
—
1
1.6
MHz
RWC = 24, Lh = 240 nH, Rh = 15
W
—
31.5
tpd1, 2
trf
f
WDX, Y