參數(shù)資料
型號： MB81116422A-67
廠商： Fujitsu Limited
英文描述： CMOS 2×2M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 2×2M ×4 位超級頁面存取模式動態(tài)RAM)
中文描述： 的CMOS 2 × 200萬× 4位超頁模式動態(tài)RAM（2 × 200萬的CMOS × 4位超級頁面存取模式動態(tài)內(nèi)存）
文件頁數(shù)： 40/43頁
文件大?。?/td> 275K
代理商： MB81116422A-67
40
MB81116422A-125/-100/-84/-67
TIMING DIAGRAM – 14 : WRITE WITH AUTO-PRECHARGE
(Example @ CL = 2, BL = 2 Applied to Same Bank)
CLK
Command
DQ
WRITA
ACTV
NOP or DESL
DQM
ACTV
D1
D2
Note:
Precharge at write with auto-precharge is started after the t
RWL
from the end of burst.
Even if the final data is masked by DQM, the precharge does not start the clock of final data input.
Once Auto-precharge command is asserted, no new command within the same bank can be issued.
Auto-precharge command doesn’t affect at full column burst operation except Burst Read & Single Write mode.
t
RAS
(min) –
t
RWL
(min)
t
RWL
(min) +
t
RP
(min)
TIMING DIAGRAM – 15 : AUTO-REFRESH TIMING
t
RC
(min)
t
RC
(min)
CLK
Command
A
11
(BA)
REF
Command
Don’t Care
Don’t Care
BA
1
NOP
NOP
REF
NOP
4
Don’t Care
3
Notes:
1. All banks should be precharged prior to the first Auto-refresh command (REF).
2. Bank select is ignored at REF command. The refresh address and bank select are selected by internal refresh counter.
3. Either NOP or DESL command should be asserted during t
RC
period while auto-refresh mode.
4. Any activation command such as ACTV or MRS command other than REF command should be asserted after t
RC
from the last REF command.
NOP
相關(guān)PDF資料
PDF描述
MB81116422A-84 CMOS 2×2M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 2×2M ×4 位超級頁面存取模式動態(tài)RAM)
MB81116822A-100 CMOS 2×1M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超級頁面存取模式動態(tài)RAM)
MB81116822A-125 CMOS 2×1M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超級頁面存取模式動態(tài)RAM)
MB81116822A-67 CMOS 2×1M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超級頁面存取模式動態(tài)RAM)
MB81116822A-84 CMOS 2×1M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超級頁面存取模式動態(tài)RAM)
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