參數(shù)資料
型號(hào): MB81117422A-100
廠商: Fujitsu Limited
英文描述: CMOS 2×2M ×4 Bit Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步動(dòng)態(tài)RAM)
中文描述: 的CMOS 2 × 200萬(wàn)× 4位同步動(dòng)態(tài)RAM(2 × 200萬(wàn)的CMOS × 4位同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 37/44頁(yè)
文件大?。?/td> 273K
代理商: MB81117422A-100
37
MB81117422A-125/-100/-84/-67
TIMING DIAGRAM - 8 : READ INTERRUPTED BY BURST STOP (Example @ BL = FULL COLUMN)
TIMING DIAGRAM - 9 : WRITE INTERRUPTED BY BURST STOP (Example @ CL = 2)
Note:
The BST command is applicable to terminated the full column burst operation.
The selection of auto-precharge option is illegal during the full column burst operation except Write
command at BURST READ & SINGLE WRITE mode.
CLK
Command
(CL=2)
DQ
Command
(CL=3)
DQ
Hi-Z
Hi-Z
BST
BST
Q
n–2
Q
n–1
Q
n
Q
n+1
Q
n–2
Q
n–1
Q
n
Q
n+1
Q
n+2
I
BSH
(3 clocks)
I
BSH
(2 clocks)
CLK
Command
DQ
Last
Data-In
Masked
by BST
BST
Command
Note:
The Burst Stop command is applicable only to full column burst operation.
相關(guān)PDF資料
PDF描述
MB81117422A-125 CMOS 2×2M ×4 Bit Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步動(dòng)態(tài)RAM)
MB81117422A-67 CMOS 2×2M ×4 Bit Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步動(dòng)態(tài)RAM)
MB81117422A-84 CMOS 2×2M ×4 Bit Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步動(dòng)態(tài)RAM)
MB81117822A-100 CMOS 2×1M ×8 Bit Synchronous Dynamic RAM(CMOS 2×1M ×8 位同步動(dòng)態(tài)RAM)
MB81117822A-125 CMOS 2×1M ×8 Bit Synchronous Dynamic RAM(CMOS 2×1M ×8 位同步動(dòng)態(tài)RAM)
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