- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377885 > MB81F643242C (Fujitsu Limited) 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | MB81F643242C |
| 廠商： | Fujitsu Limited |
| 英文描述： | 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4 × 512 kX的32位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 26/56頁(yè) |
| 文件大?。?/td> | 1001K |
| 代理商： | MB81F643242C |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)當(dāng)前第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)
26
MB81F643242C-60/-70/-10
Advanced Info (AE0.1E)
I
ABSOLUTE MAXIMUM RATINGS (See WARNING)
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
I
RECOMMENDED OPERATING CONDITIONS
(Referenced to V
SS
)
Notes:
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device. All
the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representative beforehand.
I
CAPACITANCE
(T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Value
Unit
Voltage of V
CC
Supply Relative to V
SS
V
CC
, V
CCQ
–0.5 to +4.6
V
Voltage at Any Pin Relative to V
SS
V
IN
, V
OUT
–0.5 to +4.6
V
Short Circuit Output Current
I
OUT
±50
mA
Power Dissipation
P
D
1.3
W
°
C
Storage Temperature
T
STG
–55 to +125
Parameter
Notes
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
CC
, V
CCQ
3.0
3.3
3.6
V
V
SS
, V
SSQ
0
0
0
V
Input High Voltage
*1
V
IH
2.0
—
V
CC
+ 0.5
V
Input Low Voltage
*2
V
IL
–0.5
—
0.8
V
Ambient Temperature
T
A
0
—
70
°
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input Capacitance, Except for CLK
C
IN1
2.5
—
5.0
pF
Input Capacitance for CLK
C
IN2
2.5
—
4.0
pF
I/O Capacitance
C
I/O
4.0
—
6.5
pF
*2. Undershoot limit: V
(min.)
pulse width measured at 50% of pulse amplitude.
4.6V
V
IH
V
IH
(min.)
V
IL
Pulse width
≤
5 ns
*1. Overshoot limit: V
IH
(max.)
= 4.6V for pulse width
<= 5 ns acceptable,
50% of pulse amplitude
V
IH
V
IL
-1.5V
pulse width measured at 50% of pulse amplitude.
= V
SS
-1.5V for pulse width
<= 5 ns acceptable,
50% of pulse amplitude
Pulse width
≤
5 ns
V
IL
(max.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB81F643242C-10 | 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM |
| MB81F643242C-60 | 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM |
| MB81F643242C-70 | 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM |
| MB81G83222-012 | CMOS 2×128K ×32 Synchronous GRAM(CMOS 2×128K ×32位同步圖形RAM) |
| MB81G83222-010 | CMOS 2×128K ×32 Synchronous GRAM(CMOS 2×128K ×32位同步圖形RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MB81F643242C-10 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM |
| MB81F643242C-60 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM |
| MB81F643242C-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM |
| MB81G83222-012 | 制造商:FUG 功能描述:81G83222-012 |
| MB81N261647A22FN | 制造商:Fujitsu 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。
