參數(shù)資料
型號: MB89PV820
廠商: Fujitsu Limited
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: 1.1A, 2.7-5.5V Single Hot-Swap IC High-Side MOSFET, Fault Report, Act-High Enable 8-SOIC
中文描述: 8位微控制器專有
文件頁數(shù): 24/43頁
文件大?。?/td> 573K
代理商: MB89PV820
24
MB89820 Series
I
ELECTRICAL CHARACTERISTICS
1. Absolute Maximum Ratings
(V
SS
= 0.0 V)
Precautions: Permanent device damage may occur if the above “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to the conditions as detailed in the operational sections of
this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Parameter
Symbol
Value
Unit
Remarks
Min.
Max.
Power supply voltage
LCD power supply voltage
V
CC
V3
V
SS
– 0.3
V
SS
+ 7.0
V
V
V
SS
– 0.3
V
SS
+ 7.0
V3 pin
V
I1
must not exceed V
SS
+ 7.0 V.
Except P00 to P07 and P10 to P17
for the MB89P825/PV820, and P20
to P25 without a pull-up resistor
P00 to P07 and P10 to P17 (when
selected as ports) for the MB89821/
823, and P20 to P25 without a pull-
up resistor
P00 to P07 and P10 to P17 for the
MB89P825/PV820
V
O1
must not exceed V
SS
+ 7.0 V.
Except P00 to P07 and P10 to P17
for the MB89P825/PV820, and P20
to P25 without a pull-up resistor
P00 to P07 and P10 to P17 (when
selected as ports) for the MB89821/
823, and P20 to P25 without a pull-
up resistor
P00 to P07 and P10 to P17 for the
MB89P825/PV820
Except power supply pins
Average value (operating current
×
operating rate)
Except power supply pins
Input voltage
V
I1
V
SS
– 0.3
V
CC
+ 0.3
V
V
I2
V
SS
– 0.3
V
SS
+ 7.0
V
V
I3
V
SS
– 0.3
V3 + 0.3
V
Output voltage
V
O1
V
SS
– 0.3
V
CC
+ 0.3
V
V
O2
V
SS
– 0.3
V
SS
+ 7.0
V
V
O3
V
SS
– 0.3
V3 + 0.3
V
“L” level output current
I
OL
10
mA
“L” level average output
current
I
OLAV
4
mA
Total “L” level output current
“H” level output current
Σ
I
OL
I
OH
40
–5
mA
mA
Except power supply pins
Average value (operating current
×
operating rate)
Except power supply pins
“H” level average output
current
I
OHAV
–2
mA
Total “H” level output current
Power consumption
Operating temperature
Storage temperature
Σ
I
OH
P
D
T
A
Tstg
–40
–55
–10
300
+85
+150
mA
mW
°
C
°
C
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