參數(shù)資料
型號(hào): MB95F108BSBGL
廠商: FUJITSU LTD
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PBGA96
封裝: 6 X 6 MM, 1.30 MM HEIGHT, 0.50 MM PITCH, PLASTIC, FBGA-96
文件頁(yè)數(shù): 62/80頁(yè)
文件大小: 2746K
代理商: MB95F108BSBGL
MB95100B Series
DS07-12617-3E
65
6.
Flash Memory Program/Erase Characteristics
*1 : TA
= + 25 °C, VCC = 3.0 V, 10000 cycles
*2 : TA
= + 85 °C, VCC = 2.7 V, 10000 cycles
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+85 °C) .
7.
FRAM Program Characteristics
* : Number of data read/write
Parameter
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
(4K bytes sector)
0.2*1
3.0*2
s
Excludes 00H programming prior erasure.
Sector erase time
(16K bytes sector)
0.5*1
12.0*2
s
Excludes 00H programming prior erasure.
Byte programming time
32
3600
μs
Excludes system-level overhead.
Program/erase cycle
10000
cycle
Power supply voltage at
program/erase
2.7
3.3
V
Flash memory data retention
time
20*3
year
Average TA
= +85 °C
Parameter
Value
Unit
Remarks
Min
Typ
Max
Read/write cycle*
1010
cycle
Power supply voltage at
read/write
2.7
3.6
V
Data retention time
10
year
TA
= 0 °C to +55 °C
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