參數(shù)資料
型號: MB95F223HPH-G-SNE2
廠商: FUJITSU LTD
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PDIP16
封裝: 2.54 MM PITCH, PLASTIC, DIP-16
文件頁數(shù): 43/60頁
文件大?。?/td> 3470K
代理商: MB95F223HPH-G-SNE2
MB95220H Series
48
DS07-12626-3E
6.
Flash Memory Program/Erase Characteristics
*1: TA = +25
°C, VCC = 5.0 V, 100000 cycles
*2: TA = +85
°C, VCC = 4.5 V, 100000 cycles
*3: This value is converted from the result of a technology reliability assessment. (The value is converted from the
result of a high temperature accelerated test by using the Arrhenius equation with the average temperature being
+85
°C) .
Parameter
Value
Unit
Remarks
Min
Typ
Max
Chip erase time
1*1
15*2
s
00H programming time prior to erasure is
excluded.
Byte programming time
32
3600
s
System-level overhead is excluded.
Erase/program voltage
9.5
10
10.5
V
The erase/program voltage must be
applied to the PF2 pin in erase/program.
Current drawn on PF2
5.0
mA
Current consumption of PF2 pin during
flash memory program/erase
Erase/program cycle
100000
cycle
Power supply voltage at erase/
program
3.0
5.5
V
Flash memory data retention
time
20*3
year
Average TA = +85
°C
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MB95F222KPF-G-SNE1 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PDSO16
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MB95F223HPF-G-SNE1 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PDSO16
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