參數(shù)資料
型號(hào): MB96F356RSBPMC-GSE2
廠商: Fujitsu Semiconductor America Inc
文件頁(yè)數(shù): 110/110頁(yè)
文件大小: 0K
描述: IC MCU 288KB FLASH/ROM 64LQFP
標(biāo)準(zhǔn)包裝: 1
系列: F²MC MB96350
核心處理器: F²MC-16FX
芯體尺寸: 16-位
速度: 56MHz
連通性: CAN,EBI/EMI,I²C,LIN,SCI,UART/USART
外圍設(shè)備: DMA,LVD,LVR,POR,PWM,WDT
輸入/輸出數(shù): 51
程序存儲(chǔ)器容量: 288KB(288K x 8)
程序存儲(chǔ)器類(lèi)型: 閃存
RAM 容量: 12K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 15x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 64-LQFP
包裝: 托盤(pán)
其它名稱(chēng): 865-1087
MB96350 Series
FME-MB96350 rev 7
99
2. Frequency dependency of power supply currents in PLL Run mode
The following diagrams show the current consumption of samples with typical wafer process parameters in PLL
Run mode at different frequencies and Flash timing settings.
Measurement conditions:
VCC = AVCC = 5.0V
Ta = 25C
fCLKS1 = fCLKB or fCLKS1 = 2*fCLKB as described in diagram
fCLKS2 = fCLKS1
fCLKP1 = fCLKB
fCLKP2 = fCLKB/2
Core voltage at 1.8V (VRCR:HPM[1:0] = 10B) or 1.9V (VRCR:HPM[1:0] = 11B) as described in diagram
Main clock = 4MHz external clock
Flash memory timing settings:
MTCRA=2128H/2208H (0 Flash wait states, fCLKS1 = 2*fCLKB)
MTCRA=0239H/2129H (1 Flash wait state, fCLKS1 = fCLKB)
MTCRA=4C09H/6B09H (1 Flash wait state, fCLKS1 = 2*fCLKB)
MTCRA=233AH (2 Flash wait states, fCLKS1 = fCLKB)
Average Flash access rate (number of read accesses to the Flash per CLKB clock cycle, no buffer hit):
0 Flash wait states: 0.5
1 Flash wait states: 0.33
2 Flash wait states: 0.25
MB96F353/F355 PLL Run mode currents
0
5
10
15
20
25
30
35
40
45
0
4
8
12
1620
24
2832
3640
44
4852
56
CLKB/CLKP1 (MHz)
ICCP
L
(mA)
1 Flash wait state
(CLKS1=2*CLKB, 1.9V)
1 Flash wait state
(CLKS1=2*CLKB, 1.8V)
0 Flash wait states
(CLKS1=2*CLKB, 1.8V)
1 Flash wait state
(CLKS1=CLKB, 1.8V)
2 Flash wait states
(CLKS1=CLKB, 1.8V)
2 Flash wait states
(CLKS1=CLKB, 1.9V)
: Specified in "DC characteristics"
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