參數(shù)資料
型號(hào): MB98B7515
廠商: Fujitsu Limited
英文描述: Dynamic Random Access Memory Card( 128M 動(dòng)態(tài)RAM)
中文描述: 動(dòng)態(tài)隨機(jī)存取記憶卡(128M的動(dòng)態(tài)內(nèi)存)
文件頁數(shù): 10/26頁
文件大小: 418K
代理商: MB98B7515
10
MB98B7515/7516/7517/7518
(3) MB98B7517 NOTES 3, 19
(On the recommended operating conditions)
Parameter
Notes
Symbol Min. Max. Unit
Measuring conditions
Supply Current (When
Normally Operating)
*2
I
CC1
680
mA
Average supply current
t
RC
= min.
RAS, CAS cycling
Supply Current (When Stand-by)
TTL
I
CC2
35
mA
RAS = CAS = V
IH
CMOS
17
RAS = CAS
V
CC
–0.2 V
Supply Current (On RAS
Only Refresh)
*2
I
CC3
680
mA
Average supply current
t
RC
= min.
RAS cycling, CAS = V
IH
Supply Current (In High-
speed Page Mode)
*2
I
CC4
680
mA
Average supply current
t
PC
= min.
RAS = V
IL
, CAS cycling
Supply Current (On CAS
Before RAS Refresh)
*2
I
CC5
680
mA
Average supply current
t
RC
= min.
RAS cycling, CAS before
RAS
Input Leakage Current
CAS
0
to CAS
3
A
0
to A
10
, WE
I
I(L)
–10
10
μ
A
(0 V
(0 V except the measured
pin, 4.75 V
V
IN
5.25 V)
V
CC
5.25 V)
RAS
0
to RAS
3
–30
30
OutpuT Leakage Current
DQ
0
to DQ
7
,
DQ
9
to DQ
16
DQ
18
to DQ
25
,
DQ
27
to DQ
34
I
O(L)
–20
20
μ
A
(With output impedance high
0 V
V
OUT
5.25 V)
“High” Level Output
Voltage
*1
V
OH
2.4
V
(I
OH
= –5 mA)
“Low” Level Output
Voltage
*1
V
OL
0.4
V
(I
OL
= 4.2 mA)
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