參數(shù)資料
型號: MB98B7517
廠商: Fujitsu Limited
英文描述: Dynamic Random Access Memory Card(256M 動態(tài)RAM)
中文描述: 動態(tài)隨機(jī)存取記憶卡(256M動態(tài)內(nèi)存)
文件頁數(shù): 12/26頁
文件大?。?/td> 418K
代理商: MB98B7517
12
MB98B7515/7516/7517/7518
2. AC Characteristics NOTES 3, 4, 5
(1) MB98B7515/6/7/8-70
(On the recommended operating conditions)
(Continued)
No.
Parameter
Notes
Symbol
Min.
Max.
Unit
1
Refresh Interval
t
REF
128
ms
2
Random Read/write Cycle Time
t
RC
130
ns
3
Access Time from RAS
*6,9
t
RAC
70
ns
4
Access Time from CAS
*7,9
t
CAC
25
ns
5
Column Address Access Time
*8,9
t
AA
40
ns
6
Output Data Hold Time
t
OH
2
ns
7
Output Turn On Delay Time
t
ON
2
ns
8
Output Turn Off Delay Time
*10
t
OFF
25
ns
9
Turn On/turn Off Periods
t
T
5
50
ns
10
RAS Precharge Time
t
RP
50
ns
11
RAS Pulse Width
t
RAS
70
100000
ns
12
RAS Hold Time
RAS
CAS Precharge Time
RAS
CAS Delay Time
CAS Pulse Width
t
RSH
25
ns
13
t
CRP
15
ns
14
*11,12
t
RCD
20
45
ns
15
t
CAS
25
ns
16
CAS Hold Time
t
CSH
70
ns
17
CAS Precharge Time
*17
t
CPN
10
ns
18
Low Address Setup Time
t
ASR
10
ns
19
Low Address Hold Time
t
RAH
10
ns
20
Column Address Setup Time
t
ASC
2
ns
21
Column Address Hold Time
t
CAH
15
ns
22
RAS Column Address Delay Time
*13
t
RAD
15
30
ns
23
Column Address RAS Read Time
t
RAL
40
ns
24
Column Address CAS Read Time
t
CAL
40
ns
25
Read Instruction Setup Time
t
RCS
0
ns
26
Read Instruction Hold Time from RAS
*14
t
RRH
0
ns
27
Read Instruction Hold Time
*14
t
RCH
0
ns
28
Write Instruction Setup Time
*15
t
WCS
2
ns
29
Write Instruction Hold Time
t
WCH
15
ns
30
Write Instruction Pulse Width
t
WP
15
ns
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