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參數(shù)資料
| 型號： | MB98C81123 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 2M-Byte5 V-Only Flash Miniature Card(單5V電源 4M位 微型閃存卡) |
| 中文描述： | 200萬- Byte5 V型微型只有閃存卡（單5V的電源分位微型閃存卡） |
| 文件頁數(shù)： | 27/48頁 |
| 文件大?。?/td> | 483K |
| 代理商： | MB98C81123 |
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27
MB98C81013/81123/81233/81333-10
I
ABSOLUTE MAXIMUM RATINGS
*1
*1.
Permanent device damage may occur if the above
Absolute Maximum Ratings
are exceeded. Functional
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
I
RECOMMENDED OPERATING CONDITIONS
I
DC CHARACTERISTICS
Notes:
*1. This value does not apply to CEL#, CEH# and WE#.
*2. This value does not apply to CD# and CINS#.
*3. for MB98C81013.
Parameter
Symbol
Value
Unit
Supply Voltage
V
CC
–0.5 to +6.0
V
Input Voltage
V
IN
–0.5 to V
CC
+0.5
V
Output Voltage
V
OUT
–0.5 to V
CC
+0.5
V
Temperature under Bias
T
A
0 to +60
°
C
Storage Temperature
T
STG
–30 to +70
°
C
Parameter
Symbol
Min
Typ
Max
Unit
V
CC
Supply Voltage
V
CC
4.75
5.0
5.25
V
Ground
GND
0
V
Ambient Temperature
T
A
0
55
°
C
Parameter
Test Conditions
Symbol
Value
Unit
Min
Typ
Max
Input Leakage Current *
1
V
CC
= V
CC
max., V
IN
= GND or V
CC
I
LI
±
10
μ
A
Output Leakage Current *
2
V
CC
= V
CC
max., V
IN
= GND or V
CC
I
LO
±
10
μ
A
Standby Current
V
CC
= V
CC
max., CEL#, CEH# = V
CC
V
IN
= GND or V
CC
I
SB1
20
100
(250 *
3
)
μ
A
CEL#, CEH#, RESET# = V
IH
I
SB2
5.0
mA
Active Read Current
CEL#, CEH# = V
IL
, Cycle = 150 ns
OE# = V
IH
I
CC1
70
100
mA
Program Current
Program in progress (
×
16 mode)
Erase in progress (
×
16 mode)
I
CC2
80
150
mA
Erase Current
I
CC3
80
150
mA
Input Low Voltage
—
V
IL
–0.5
—
0.8
V
Input High Voltage
—
V
IH
0.7 V
CC
—
V
CC
+0.5
V
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
min.
V
OL
0.45
V
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC
min.
V
OH
2.4
V
Low V
CC
Lock-out Voltage
—
V
LKO
3.2
3.7
4.2
V
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