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參數(shù)資料
| 型號： | MB9BF418SPMC |
| 廠商： | FUJITSU LTD |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, RISC MICROCONTROLLER, PQFP144 |
| 封裝： | 20 X 20 MM, 1.70 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, PLASTIC, LQFP-144 |
| 文件頁數(shù)： | 75/116頁 |
| 文件大?。?/td> | 1064K |
| 代理商： | MB9BF418SPMC |
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61
FUJITSU SEMICONDUCTOR CONFIDENTIAL
r1.0
MB9B410T Series
DS706-00018-0v01-E
C Pin
As this series includes an internal regulator, always connect a bypass capacitor of approximately 4.7 F to
the C pin for use by the regulator.
Mode pins (MD0)
Connect the MD pin (MD0) directly to VCC or VSS pins. Design the printed circuit board such that the
pull-up/down resistance stays low, as well as the distance between the mode pins and VCC pins or VSS pins
is as short as possible and the connection impedance is low, when the pins are pulled-up/down such as for
switching the pin level and rewriting the Flash memory data. It is because of preventing the device
erroneously switching to test mode due to noise.
Notes on power-on
Turn power on/off in the following order or at the same time.
If not using the A/D converter, connect AVCC =VCC and AVSS = VSS.
Turning on :VCC → AVCC → AVRH
Turning off : AVRH → AVCC → VCC
Serial Communication
There is a possibility to receive wrong data due to the noise or other causes on the serial communication.
Therefore, design a printed circuit board so as to avoid noise.
Consider the case of receiving wrong data due to noise, perform error detection such as by applying a
checksum of data at the end. If an error is detected, retransmit the data.
Differences in features among the products with different memory sizes and
between FLASH products and MASK products
The electric characteristics including power consumption, ESD, latch-up, noise characteristics, and
oscillation characteristics among the products with different memory sizes and between FLASH products
and MASK products are different because chip layout and memory structures are different.
If you are switching to use a different product of the same series, please make sure to evaluate the electric
characteristics.
Device
C
VSS
4.7μF
GND
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