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參數(shù)資料
| 型號： | MBD54DWT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Schottky Barrier Diodes |
| 中文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | MINIATURE, CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MBD54DWT1 |
5–1
Motorola, Inc. 1997
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 V @ IF = 10 mAdc
MAXIMUM RATINGS
(TJ = 125
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
PF
30
Volts
Forward Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
150
1.2
mW
mW/
°
C
Forward Current (DC)
IF
TJ
Tstg
200 Max
mA
Junction Temperature
125 Max
°
C
Storage Temperature Range
–55 to +150
°
C
DEVICE MARKING
MBD54DWT1 = BL
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10
μ
A)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
V(BR)R
CT
IR
VF
VF
VF
trr
30
—
—
Volts
—
7.6
10
pF
—
0.5
2.0
μ
Adc
—
0.22
0.24
Vdc
—
0.41
0.5
Vdc
—
0.52
1.0
Vdc
—
—
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
VF
VF
IF
IFRM
IFSM
—
0.29
0.32
Vdc
—
0.35
0.40
Vdc
—
—
200
mAdc
Repetitive Peak Forward Current
—
—
300
mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s)
—
—
600
mAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 3
Order this document
by MBD54DWT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 419B–01, STYLE 6
SOT–363
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
123
654
Anode 1
6 Cathode
Cathode 3
4 Anode
N/C 2
5 N/C
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| MBD54DWT1 | Dual SCHOTTKY Barrier Diodes |
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| MBR1090 | 10.0 AMPS. Schottky Barrier Rectifiers |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBD54DWT1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD54DWT1G | 功能描述:肖特基二極管與整流器 30V 150mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBD54DWT1G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBD54DWT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD5A | 功能描述:基本/快動(dòng)開關(guān) SPST-NO OFF-MOM 10A 250VAC 274gf RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:SPDT 執(zhí)行器:Lever 電流額定值:5 A 電壓額定值 AC:250 V 電壓額定值 DC:30 V 功率額定值: 工作力:120 g IP 等級:IP 67 NEMA 額定值: 端接類型:Wire 安裝:Panel |
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