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參數(shù)資料
| 型號： | MBF110PFWSTG |
| 廠商： | FUJITSU LTD |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | Solid-State Fingerprint Sensor |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDSO80 |
| 封裝： | LQFP, TSOP-80 |
| 文件頁數(shù)： | 8/24頁 |
| 文件大?。?/td> | 240K |
| 代理商： | MBF110PFWSTG |
RA5
RA4
Solid-State Fingerprint Sensor
4
Fujitsu Microelectronics, Inc.
Function Table
Register Map
CE1
CE2
RD
WR
Mode
Data Lines
H
X
X
X
De-selected
High-Z
X
L
X
X
De-selected
High-Z
L
H
H
H
Standby
High-Z
L
H
L
H
Read
Data Out
L
H
H
L
Write
Data In
A3
A2
A1
A0
Access
Register
Description
0
0
0
0
Write
RAL
Low Order Row Address Register
0
0
0
1
Write
RAH
High Order Row Address Register
0
0
1
0
Read/Write
CAL
Low Order Column Address Register
0
0
1
1
Write
CAH
High Order Column Address Register
0
1
0
0
Write
DTR
Discharge Time Register
0
1
0
1
Write
DCR
Discharge Current Register
0
1
1
0
Write
RSR
Reserved
MSB
LSB
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
RA7
RA6
RA3
RA2
RA1
RA0
Bit Number
Bit Name
Function
[7:0]
RA[7:0]
Low eight bits of Row Address Register.
Address Register Descriptions
Refer to
calculate row capture and A/D conversion times.
Row Capture and A/D Conversion Timing
on page 9 to
RAL (A3-A0 Address 0000) Write Only
Low Order Row Address Register
This register and bit 0 of RAH form the 9-bit Row Address Register
that selects the row to be captured. The 9-bit Row Address Register
selects a row address from 0 through 299. Writing the RAL starts a
row capture. Only RAL has to be written if RAH doesn’t change,
otherwise RAH has to be written before RAL.
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