- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377935 > MBM29DL162BD (Fujitsu Limited) 16M (2M x 8/1M x 16) BIT Dual Operation PDF資料下載
參數(shù)資料
| 型號： | MBM29DL162BD |
| 廠商： | Fujitsu Limited |
| 英文描述： | 16M (2M x 8/1M x 16) BIT Dual Operation |
| 中文描述： | 16米（2米x 8/1M × 16）位雙操作 |
| 文件頁數(shù)： | 12/76頁 |
| 文件大小： | 1145K |
| 代理商： | MBM29DL162BD |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁
MBM29DL16XTD/BD
-70/90/12
12
I
ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
(Continued)
Notes: 1. The I
CC
current listed includes both the DC operating current and the frequency dependent component.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only V
CC
applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
Parameter
Symbol
Conditions
Value
Unit
Min.
Max.
Input Leakage Current
I
LI
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.
–1.0
+1.0
μ
A
μ
A
Output Leakage Current
I
LO
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.
–1.0
+1.0
A
9
, OE, RESET Inputs Leakage
Current
I
LIT
V
CC
= V
CC
Max.
A
9
, OE, RESET = 12.5 V
—
35
μ
A
V
CC
Active Current (Note 1)
I
CC1
CE = V
IL
, OE = V
IH
,
f = 5 MHz
Byte
—
13
mA
Word
15
CE = V
IL
, OE = V
IH
,
f = 1 MHz
Byte
—
7
mA
Word
7
V
CC
Active Current (Note 2)
I
CC2
CE = V
IL
, OE = V
IH
—
35
mA
V
CC
Current (Standby)
I
CC3
V
CC
= V
CC
Max., CE = V
CC
± 0.3 V,
RESET = V
CC
± 0.3 V
—
5
μ
A
V
CC
Current (Standby, Reset)
I
CC4
V
CC
= V
CC
Max., WP/ACC= V
CC
±
0.3 V, RESET = V
SS
± 0.3 V
—
5
μ
A
V
CC
Current
(Automatic Sleep Mode) (Note 3)
I
CC5
V
CC
= V
CC
Max., CE = V
SS
± 0.3 V,
RESET = V
CC
± 0.3 V
V
IN
= V
CC
± 0.3 V or V
SS
±
0.3 V
—
5
μA
V
CC
Active Current (Note 5)
(Read-While-Program)
I
CC6
CE = V
IL
, OE = V
IH
Byte
—
48
mA
Word
—
50
V
CC
Active Current (Note 5)
(Read-While-Erase)
I
CC7
CE = V
IL
, OE = V
IH
Byte
—
48
mA
Word
—
50
V
CC
Active Current
(Erase-Suspend-Program)
I
CC8
CE = V
IL
, OE = V
IH
—
35
mA
ACC Accelerated Program
Current
I
ACC
V
CC
= V
CC
Max.
WP/ACC = V
ACC
Max.
—
20
mA
Input Low Level
V
IL
—
–0.5
0.6
V
Input High Level
V
IH
—
2.0
V
CC
+0.3
V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
V
ACC
—
8.5
9.5
V
Voltage for Autoselect and Sector
Protection (A
9
, OE, RESET)
(Note 4)
V
ID
—
11.5
12.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL162BE | 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TE70PBT | 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL161BE | 16M (2MX8/1MX16) BIT Dual Operation |
| MBM29DL161TE | 16M (2MX8/1MX16) BIT Dual Operation |
| MBM29DL162TE | 16M (2MX8/1MX16) BIT Dual Operation |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL162BD-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-70PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-70PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。