參數(shù)資料
型號: MBM29DL163BD
廠商: Fujitsu Limited
英文描述: 16M (2M x 8/1M x 16) BIT Dual Operation
中文描述: 16米(2米x 8/1M × 16)位雙操作
文件頁數(shù): 1/76頁
文件大小: 1145K
代理商: MBM29DL163BD
DS05-20874-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
×
8/1M
×
16) BIT
Dual Operation
MBM29DL16XTD/BD
-70/90/12
I
FEATURES
0.33
μ
m Process Technology
Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Single 3.0 V read, program, and erase
Minimizes system level power requirements
(Continued)
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM29DL16XTD/MBM29DL16XBD
Ordering Part No.
V
CC
= 3.3 V
+0.3 V
–0.3 V
70
V
CC
= 3.0 V
+0.6 V
–0.3 V
90
12
Max. Address Access Time (ns)
70
90
120
Max. CE Access Time (ns)
70
90
120
Max. OE Access Time (ns)
30
35
50
48-pin plastic TSOP (I)
(FPT-48P-M19)
48-pin plastic TSOP (I)
(FPT-48P-M20)
48-pin plastic FBGA
(BGA-48P-M13)
Marking Side
Marking Side
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
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