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參數(shù)資料
| 型號： | MBM29DL163BE70PFTN |
| 廠商： | Fujitsu Limited |
| 英文描述： | 16M (2M x 8/1M x 16) BIT Dual Operation |
| 中文描述： | 16米（2米x 8/1M × 16）位雙操作 |
| 文件頁數(shù)： | 2/75頁 |
| 文件大小： | 1089K |
| 代理商： | MBM29DL163BE70PFTN |
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MBM29DL16XTE/BE
-70/90/12
2
(Continued)
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type)
48-ball FBGA (Package suffix: PBT)
Minimum 100,000 program/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
Eight 4K word and thirty one 32K word sectors in word mode
Eight 8K byte and thirty one 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At V
IL
, allows protection of boot sectors, regardless of sector protection/unprotection status
At V
IH
, allows removal of boot sector protection
At V
ACC
, increases program performance
Embedded Erase
TM
* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
* Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Program Suspend/Resume
Suspends the program operation to allow a read in another sector with in the same device
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
Sector Group Protection Set function by Extended sector group protection command
Fast Programming Function by Extended Command
Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin.
In accordance with CFI (Common Flash Memory Interface)
* :
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL163BE70PFTR | TVS BIDIRECT 600W 51V SMB |
| MBM29DL163BE70TN | TVS UNIDIRECT 54V 600W SMB |
| MBM29DL163BE70TR | 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL164BE-12 | 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL164TE-12 | 16M (2M X 8/1M X 16) BIT Dual Operation |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL163BE70PFTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8/1M x 16) BIT Dual Operation |
| MBM29DL163BE70TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163BE-70TN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163BE70TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163BE-70TR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
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