參數(shù)資料
型號(hào): MBM29DL164TE-12
廠商: Fujitsu Limited
英文描述: 16M (2M X 8/1M X 16) BIT Dual Operation
中文描述: 16米(2米x 8/1M × 16)位雙操作
文件頁(yè)數(shù): 33/75頁(yè)
文件大小: 1089K
代理商: MBM29DL164TE-12
MBM29DL16XTE/BE
-70/90/12
33
The system can determine the status of the erase operation by using DQ
7
(Data Polling), DQ
6
(Toggle Bit), or
RY/BY.
The sector erase begins after the “t
TOW
” time out from the rising edge of CE or WE whichever happens first for
the last sector erase command pulse and terminates when the data on DQ
7
is “1” (See Write Operation Status
section.) at which time the devices return to the read mode. Data polling and Toggle Bit must be performed at
an address within any of the sectors being erased.
Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time (Preprogramming)]
×
Number of Sector
Erase
In case of multiple sector erase across bank boundaries, a read from bank (read-while-erase) can not performe.
Figure 23 illustrates the Embedded Erase
TM
Algorithm using typical command strings and bus operations.
Erase Suspend/Resume
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads
from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase
operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if
written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command
(B0H) during the Sector Erase time-out results in immediate termination of the time-out period and suspension
of the erase operation.
Writing the Erase Resume command (30H) resumes the erase operation. The bank addresses of sector being
erasing or suspending should be set when writting the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of “t
SPD
” to suspend the erase operation. When the devices have entered the erase-suspended mode, the
RY/BY output pin will be at Hi-Z and the DQ
7
bit will be at logic “1”, and DQ
6
will stop toggling. The user must
use the address of the erasing sector for reading DQ
6
and DQ
7
to determine if the erase operation has been
suspended. Further writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ
2
to toggle. (See the section on DQ
2
.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate
command sequence for Program. This program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Program mode except that the data must
be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ
2
to toggle. The end of the erase-
suspended Program operation is detected by the RY/BY output pin, Data polling of DQ
7
or by the Toggle Bit I
(DQ
6
) which is the same as the regular Program operation. Note that DQ
7
must be read from the Program address
while DQ
6
can be read from any address within bank being erase-suspended.
To resume the operation of Sector Erase, the Resume command (30H) should be written to the bank being erase
suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend
command can be written after the chip has resumed erasing.
相關(guān)PDF資料
PDF描述
MBM29DL164TE-70 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL164TE-90 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL16XBD 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL16xBE 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL163TD CAP 100UF 6.3V ELECT FC SMD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL164TE-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL164TE70PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL164TE-70PBT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL164TE70PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL164TE70PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8/1M x 16) BIT Dual Operation