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參數(shù)資料
| 型號(hào)： | MBM29DL321BD-80PFTR |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 32M (4M X 8/2M X 16) BIT Dual Operation |
| 中文描述： | 4M X 8 FLASH 3V PROM, 80 ns, PDSO48 |
| 封裝： | PLASTIC, REVERSE, TSOP1-48 |
| 文件頁數(shù)： | 38/80頁 |
| 文件大小： | 1588K |
| 代理商： | MBM29DL321BD-80PFTR |
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MBM29DL32XTE/BE
-80/90/12
38
I
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the
read mode. Some commands are required Bank Address (BA) input. When command sequences are inputted
to bank being read, the commands have priority than reading. Table 5 defines the valid register command
sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are valid only while the
Sector Erase operation is in progress. Also the Program Suspend (B0h) and Program Resume (30h) commands
are valid only while the Program operation is in progress. Moreover both Read/Reset commands are functionally
equivalent, resetting the device to the read mode. Please note that commands are always written at DQ
0
to DQ
7
and DQ
8
to DQ
15
bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
5
= 1) to Read/Reset mode, the Read/
Reset operation is initiated by writing the Read/Reset command sequence into the command register. Micro-
processor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM pro-
grammers typically access the signature codes by raising A
9
to a high voltage. However, multiplexing high voltage
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming method-
ology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.
Following the command write, a read cycle from address (BA)00h retrieves the manufacture code of 04h. A read
cycle from address (BA)01h for
×
16((BA)02h for
×
8) returns the device code (MBM29DL321TE = 59h and
MBM29DL321BE = 5Ah for
×
8 mode; MBM29DL321TE = 2259h and MBM29DL321BE = 225Ah for
×
16 mode).
(MBM29DL322TE = 55h and MBM29DL322BE = 56h for
×
8 mode; MBM29DL322TE = 2255h and
MBM29DL322BE = 2256h for
×
16 mode). (MBM29DL323TE = 50h and MBM29DL323BE = 53h for
×
8 mode;
MBM29DL323TE = 2250h and MBM29DL323BE = 2253h for
×
16 mode). (MBM29DL324TE = 5Ch and
MBM29DL324BE = 5Fh for
×
8 mode; MBM29DL324TE = 225Ch and MBM29DL324BE = 225Fh for
×
16 mode).
(See Tables 6.1 to 6.8.)
All manufacturer and device codes will exhibit odd parity with DQ
7
defined as the parity bit. Sector state (protection
or unprotection) will be informed by address (BA)02h for
×
16 ((BA)04h for
×
8). Scanning the sector group
addresses (A
20
, A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
) while (A
6
, A
1
, A
0
) = (0, 1, 0) will produce a logical “1” at
device output DQ
0
for a protected sector group. The programming verification should be performed by verify
sector group protection on the protected sector. (See Tables 10 and 11.)
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and
device codes and sector protection status from non-selected bank, it is necessary to write Read/Reset command
sequence into the register and then Autoselect command should be written into the bank to be read.
If the software (program code) for Autoselect command is stored into the Flash memory, the device and manu-
facture codes should be read from the other bank where is not contain the software.
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| MBM29DL321BD-90 | 32M (4M X 8/2M X 16) BIT Dual Operation |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL321BD-90 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M X 8/2M X 16) BIT Dual Operation |
| MBM29DL321BE | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL321BE12PBT | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL321BE-12PBT | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL321BE12TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
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