參數(shù)資料
型號(hào)： MBM29DL321TE80PBT
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 32M (4M x 8/2M x 16) BIT Dual Operation
中文描述： 2M X 16 FLASH 3V PROM, 80 ns, PBGA63
封裝： PLASTIC, FBGA-63
文件頁(yè)數(shù)： 3/80頁(yè)
文件大?。?/td> 1588K
代理商： MBM29DL321TE80PBT
MBM29DL32XTE/BE
-80/90/12
3
I
FEATURES
0.23
μ
m Process Technology
Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type)
63-ball FBGA (Package suffix: PBT
Minimum 100,000 program/erase cycles
High performance
80 ns maximum access time
Sector erase architecture
Eight 4K word and sixty-three 32K word sectors in word mode
Eight 8K byte and sixty-three 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At V
IL
, allows protection of boot sectors, regardless of sector protection/unprotection status
At V
IH
, allows removal of boot sector protection
At V
ACC
, increases program performance
Embedded Erase
TM
*Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
Sector Group Protection Set function by Extended sector group protection command
Fast Programming Function by Extended Command
Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin.
In accordance with CFI (Common Flash Memory Interface)
*:
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料
PDF描述
MBM29DL322TE80PBT 32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL323TE80PBT 32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL324TE80PBT 32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL321TE80TN 32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL322TE80TN 32M (4M x 8/2M x 16) BIT Dual Operation
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL321TE-80PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL321TE80TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL321TE-80TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL321TE80TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL321TE-80TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation
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