- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377939 > MBM29DL322BE-80TN (Fujitsu Limited) 32M (4M x 8/2M x 16) BIT Dual Operation PDF資料下載
參數(shù)資料
| 型號： | MBM29DL322BE-80TN |
| 廠商： | Fujitsu Limited |
| 英文描述： | 32M (4M x 8/2M x 16) BIT Dual Operation |
| 中文描述： | 32M的（4米× 8/2M × 16）位雙操作 |
| 文件頁數(shù)： | 1/80頁 |
| 文件大?。?/td> | 1588K |
| 代理商： | MBM29DL322BE-80TN |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁
DS05-20881-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
32M (4M
×
8/2M
×
16) BIT
Dual Operation
MBM29DL32XTE/BE
-80/90/12
I
DESCRIPTION
The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M
words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be
reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two
separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s
standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access
from a non-busy bank of the array while an embedded write (either a program or an erase) operation is
simultaneously taking place on the other bank.
(Continued)
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM29DL32XTE/BE
Ordering Part No.
V
CC
= 3.3 V
+0.3 V
–0.3 V
80
—
—
V
CC
= 3.0 V
+0.6 V
–0.3 V
—
90
12
Max. Address Access Time (ns)
80
90
120
Max. CE Access Time (ns)
80
90
120
Max. OE Access Time (ns)
30
35
50
48-pin plastic TSOP (I)
(FPT-48P-M19)
48-pin plastic TSOP (I)
(FPT-48P-M20)
63-ball plastic FBGA
(BGA-63P-M01)
Marking Side
Marking Side
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL322BE-80TR | 32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL322BE-90PBT | 32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL322BE-90TN | 32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL322BE-90TR | 32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL322BE12PBT | NH FUSE 125A 500V GL/GG SIZE 01 DUAL IN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL322BE80TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL322BE-80TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL322BE90PBT | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL322BE-90PBT | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL322BE90TN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。