參數(shù)資料
型號: MBM29DL323BE90TR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 32M (4M x 8/2M x 16) BIT Dual Operation
中文描述: 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: PLASTIC, REVERSE, TSOP1-48
文件頁數(shù): 58/80頁
文件大?。?/td> 1588K
代理商: MBM29DL323BE90TR
MBM29DL32XTE/BE
-80/90/12
58
t
CP
t
DS
t
WHWH1
t
WC
t
AH
WE
OE
Address
Data
t
AS
t
CPH
t
DH
DQ
7
A0h
D
OUT
CE
555h
PA
PA
Data Polling
3rd Bus Cycle
t
WS
t
WH
t
GHEL
PD
Figure 7 AC Waveforms for Alternate CE Controlled Program Operations
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the
×
16 mode. (The addresses differ from
×
8 mode.)
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