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參數(shù)資料
| 型號： | MBM29DL323TE90TN |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 32M (4M x 8/2M x 16) BIT Dual Operation |
| 中文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 46/80頁 |
| 文件大?。?/td> | 1588K |
| 代理商： | MBM29DL323TE90TN |
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MBM29DL32XTE/BE
-80/90/12
46
erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or Toggle Bit I. If DQ
3
is low (“0”), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of DQ
3
prior to and following each subsequent Sector Erase command. If DQ
3
were high on
the second status check, the command may not have been accepted.
See Table 14: Hardware Sequence Flags.
DQ
2
Toggle Bit II
This toggle bit II, along with DQ
6
, can be used to determine whether the devices are in the Embedded Erase
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ
2
to toggle during the Embedded Erase Algorithm. If the
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ
2
to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte
address of the non-erase suspended sector will indicate a logic “1” at the DQ
2
bit.
DQ
6
is different from DQ
2
in that DQ
6
toggles only when the standard program or Erase, or Erase Suspend
Program operation is in progress. The behavior of these two status bits, along with that of DQ
7
, is summarized
as follows:
For example, DQ
2
and DQ
6
can be used together to determine if the erase-suspend-read mode is in progress.
(DQ
2
toggles while DQ
6
does not.) See also Table 15 and Figure 12.
Furthermore, DQ
2
can also be used to determine which sector is being erased. When the device is in the erase
mode, DQ
2
toggles if this bit is read from an erasing sector.
To operate toggle bit function properly, CE or OE must be high when bank address is changed.
Table 15 Toggle Bit Status
Note: Successive reads from the erasing or erase-suspend sector will cause DQ
2
to toggle. Reading from non-
erase suspend sector address will indicate logic “1” at the DQ
2
bit.
RY/BY
Ready/Busy
The MBM29DL32XTE/BE provide a RY/BY open-drain output pin as a way to indicate to the host system that
the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are
busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/
write or erase operation. When the RY/BY pin is low, the devices will not accept any additional program or erase
commands. If the MBM29DL32XTE/BE are placed in an Erase Suspend mode, the RY/BY output will be high.
During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth write pulse. The RY/BY pin will indicate
a busy condition during the RESET pulse. Refer to Figures 13 and 14 for a detailed timing diagram. The RY/BY
pin is pulled high in standby mode.
Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to V
CC
.
Mode
DQ
7
DQ
6
DQ
2
Program
DQ
7
Toggle
1
Erase
0
Toggle
Toggle (Note)
Erase-Suspend Read
(Erase-Suspended Sector)
1
1
Toggle
Erase-Suspend Program
DQ
7
Toggle
1 (Note)
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| MBM29DL323TE80PBT | 32M (4M x 8/2M x 16) BIT Dual Operation |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL323TE-90TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL323TE90TN# | 制造商:FUJITSU 功能描述: |
| MBM29DL323TE90TR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation |
| MBM29DL323TE-90TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation |
| MBM29DL324BD | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M X 8/2M X 16) BIT Dual Operation |
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