參數(shù)資料
型號: MBM29DL324BE12TR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 32M (4M x 8/2M x 16) BIT Dual Operation
中文描述: 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: PLASTIC, REVERSE, TSOP1-48
文件頁數(shù): 54/80頁
文件大?。?/td> 1588K
代理商: MBM29DL324BE12TR
MBM29DL32XTE/BE
-80/90/12
54
I
ERASE AND PROGRAMMING PERFORMANCE
I
PIN CAPACITANCE
Note: Test conditions T
A
= 25°C, f = 1.0 MHz
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
1
10
s
Excludes programming time
prior to erasure
Word Programming Time
16
360
μ
s
Excludes system-level
overhead
Byte Programming Time
8
300
μ
s
Chip Programming Time
100
s
Excludes system-level
overhead
Program/Erase Cycle
100,000
cycle
Parameter
symbol
Parameter description
Test setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8
11
pF
C
IN3
WP/ACC Pin Capacitance
V
IN
= 0
21.5
22.5
pF
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相關代理商/技術參數(shù)
參數(shù)描述
MBM29DL324BE-12TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation
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MBM29DL324BE80TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation
MBM29DL324BE-80TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M x 8/2M x 16) BIT Dual Operation