參數(shù)資料
型號: MBM29DL800BA-70
廠商: Fujitsu Limited
英文描述: LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000ucd; Viewing Angle:16 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: 800萬(100萬X 8/512K × 16)位
文件頁數(shù): 11/59頁
文件大小: 600K
代理商: MBM29DL800BA-70
11
MBM29DL800TA
-70/-90/-12
/MBM29DL800BA
-70/-90/-12
I
FUNCTIONAL DESCRIPTION
Simultaneous Operation
MBM29DL800TA/BA have feature, which is capability of reading data from one bank of memory while a program
or erase operation is in progress in the other bank of memory (simultaneous operation), in addition to the
conventional features (read, program, erase, erase-suspend read, and erase-suspend program). The bank
selection can be selected by bank address (A
16
to A
18
) with zero latency.
The MBM29DL800TA/BA have two banks which contain Bank 1 (16KB, 32KB, 8KB, 8KB, 8KB, 8KB, 32KB, and
16KB) and Bank 2 (64KB
×
fourteen sectors).
The simultaneous operation can not execute multi-function mode in the same bank. Table 4 shows combination
to be possible for simultaneous operation.
*: An erase operation may also be supended to read from or program to a sector not being erased.
Read Mode
The MBM29DL800TA/BA have two control functions which must be satisfied in order to obtain data at the outputs.
CE is the power control and should be used for a device selection. OE is the output control and should be used
to gate data to the output pins if a device is selected.
Address access time (t
ACC
) is equal to the delay from stable addresses to valid output data. The chip enable
access time (t
CE
) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least t
ACC
-t
OE
time.) When reading out a data without changing addresses after
power-up, it is necessary to input hardware reset or to change CE pin from “H” or “L”
Standby Mode
There are two ways to implement the standby mode on the MBM29DL800TA/BA devices, one using both the
CE and RESET pins; the other via the RESET pin only.
When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V
CC
± 0.3 V.
Under this condition the current consumed is less than 5
μ
A max. During Embedded Algorithm operation, V
CC
active current (I
CC2
) is required even CE = “H”. The device can be read with standard access time (t
CE
) from either
of these standby modes.
When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at V
SS
± 0.3 V (CE
= “H” or “L”). Under this condition the current is consumed is less than 5
μ
A max. Once the RESET pin is taken
high, the device requires t
RH
of wake up time before outputs are valid for read access.
In the standby mode the outputs are in the high impedance state, independent of the OE input.
Table 4 Simultaneous Operation
Case
Bank 1 Status
Bank 2 Status
1
Read mode
Read mode
2
Read mode
Autoselect mode
3
Read mode
Program mode
4
Read mode
Erase mode *
5
Autoselect mode
Read mode
6
Program mode
Read mode
7
Erase mode *
Read mode
相關(guān)PDF資料
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