參數(shù)資料
型號(hào)： MBM29DL800TA
廠(chǎng)商： Fujitsu Limited
英文描述： 8M (1M X 8/512K X 16) BIT
中文描述： 800萬(wàn)（100萬(wàn)X 8/512K × 16）位
文件頁(yè)數(shù)： 19/59頁(yè)
文件大小： 600K
代理商： MBM29DL800TA
19
MBM29DL800TA
-70/-90/-12
/MBM29DL800BA
-70/-90/-12
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the
read mode. Some commands are required Bank Address (BA) input. When command sequences are inputed
to bank being read, the commands have priority than reading. Table 8 defines the valid register command
sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress. Moreover both Read/Reset commands are functionally equivalent,
resetting the device to the read mode. Please note that commands are always written at DQ
0
to DQ
7
and DQ
8
to DQ
15
bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
5
= 1) to Read/Reset mode, the Read/
Reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A
9
to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.
Following the command write, a read cycle from address (BA)00H retrieves the manufacture code of 04H. A
read cycle from address (BA)01H for
×
16((BA)02H for
×
8) returns the device code (MBM29DL800TA = 4AH and
MBM29DL800BA = CBH for
×
8 mode; MBM29DL800TA = 224AH and MBM29DL800BA = 22CBH for
×
16 mode).
(See Tables 5.1 and 5.2.)
All manufacturer and device codes will exhibit odd parity with DQ
7
defined as the parity bit. Sector state (protection
or unprotection) will be informed by address (BA)02H for
×
16 ((BA)04H for
×
8). Scanning the sector addresses
(A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
) while (A
6
, A
1
, A
0
) = (0, 1, 0) will produce a logical “1” at device output DQ
0
for a protected sector. The programming verification should be performed by verify sector protection on the
protected sector. (See Tables 2 and 3.)
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and
device codes and sector protection status from non-selected bank, it is necessary to write Read/Reset command
sequence into the register and then Autoselect command should be written into the bank to be read.
If the software (program code) for Autoselect command is stored into the Frash memory, the device and
manufacture codes should be read from the other bank where is not contain the software.
相關(guān)PDF資料
PDF描述
MBM29DL800BA-70 LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000ucd; Viewing Angle:16 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes
MBM29DL800BA-90 LED Lamp; Bulb Size:T-1 3/4; LED Color:Yellow; Luminous Intensity:2500ucd; Viewing Angle:15 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-40 C to +85 C; Color:Yellow; Leaded Process Compatible:Yes RoHS Compliant: Yes
MBM29DL800TA-12 122 x 32 pixel format, LED or EL Backlight available
MBM29DL800BA 8M (1M X 8/512K X 16) BIT
MBM29DL800BA-12 LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000mcd; Viewing Angle:22 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to C; Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL800TA-12 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29DL800TA-70 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29DL800TA-70PBT 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT
MBM29DL800TA-70PBT-SF2 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT
MBM29DL800TA-70PFTN 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT
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