參數(shù)資料
型號(hào): MBM29F017A-90PNS
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 16M (2M X 8) BIT
中文描述: 2M X 8 FLASH 5V PROM, 90 ns, PDSO40
封裝: PLASTIC, SON-40
文件頁數(shù): 16/47頁
文件大?。?/td> 469K
代理商: MBM29F017A-90PNS
16
MBM29F017A
-70/-90/-12
Chip Erase
Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase
TM
Algorithm command sequence the device will automatically program and verify the entire memory for an all zero
data pattern prior to electrical erase. The system is not required to provide any controls or timings during these
operations.
The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates
when the data on DQ
7
is “1” (See Write Operation Status section.) at which time the device returns to read the
mode.
Figure 16 illustrates the Embedded Erase
TM
Algorithm using typical command strings and bus operations.
Sector Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the sector erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of WE, while the command
(Data = 30H) is latched on the rising edge of WE. After time-out of 50 μs from the rising edge of the last sector
erase command, the sector erase operation will begin.
Multiple sectors may be erased concurrently by writing the six bus cycle operations on Table 6. This sequence
is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently
erased. The time between writes must be less than 50 μs otherwise that command will not be accepted and
erasure will start. It is recommended that processor interrupts be disabled during this time to guarantee this
condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of 50 μs
from the rising edge of the last WE will initiate the execution of the Sector Erase command (s). If another falling
edge of the WE occurs within the 50 μs time-out window the timer is reset. (Monitor DQ
3
to determine if the
sector erase timer window is still open, see section DQ
3
, Sector Erase Timer.) Any command other than Sector
Erase or Erase Suspend during this time-out period will reset the device to the read mode, ignoring the previous
command string. Resetting the device once execution has begun will corrupt the data in that sector. In that case,
restart the erase on those sectors and allow them to complete. (Refer to the Write Operation Status section for
DQ
3
, Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and with
any number of sectors (0 to 31).
Sector erase does not require the user to program the device prior to erase. The device automatically programs
all memory locations in the sector (s) to be erased prior to electrical erase. When erasing a sector or sectors
the remaining unselected sectors are not affected. The system is not required to provide any controls or timings
during these operations.
The automatic sector erase begins after the 50 μs time out from the rising edge of the WE pulse for the last
sector erase command pulse and terminates when the data on DQ
7
is “1” (See Write Operation Status section.)
at which time the device returns to the read mode. Data polling must be performed at an address within any of
the sectors being erased.
Figure 16 illustrates the Embedded Erase
TM
Algorithm using typical command strings and bus operations.
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