參數(shù)資料
型號: MBM29F400BC-70PFTR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: Replaced by TPS2043B : 0.7A, 2.7-5.5V Triple (2In/3Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 16-SOIC 0 to 85
中文描述: 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝: PLASTIC, REVERSE, TSOP1-48
文件頁數(shù): 24/47頁
文件大?。?/td> 542K
代理商: MBM29F400BC-70PFTR
24
MBM29F400TC
-55/-70/-90
/MBM29F400BC
-55/-70/-90
I
DC CHARACTERISTICS
Notes:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component
(at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Applicable to sector protection function.
4. (V
ID
- V
CC
) do not exceed 9 V.
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.
–1.0
+1.0
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.
–1.0
+1.0
μA
I
LIT
A
9
, OE, RESET Inputs Leakage
Current
V
CC
= V
CC
Max.
A
9
, OE, RESET = 12.5 V
50
μA
I
CC1
V
CC
Active Current (Note 1)
CE = V
IL
, OE = V
IH
Byte
35
mA
Word
40
I
CC2
V
CC
Active Current (Note 2)
CE = V
IL
, OE = V
IH
50
mA
I
CC3
V
CC
Current (Standby)
V
CC
= V
CC
Max., CE = V
IH
,
RESET = V
IH
1
mA
V
CC
= V
CC
Max., CE = V
CC
±
0.3 V,
RESET = V
CC
±
0.3 V
5
μA
I
CC4
V
CC
Current (Standby, Reset)
V
CC
= V
CC
Max.,
RESET = V
IL
1
mA
V
CC
= V
CC
Max.,
RESET = V
SS
±
0.3 V
5
μA
V
IL
Input Low Level
–0.5
0.8
V
V
IH
Input High Level
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect and
Sector Protection
(A
9
, OE, RESET) (Note 3, 4)
11.5
12.5
V
V
OL
Output Low Voltage Level
I
OL
= 5.8mA, V
CC
= V
CC
Min.
0.45
V
V
OH1
Output High Voltage Level
I
OH
= –2.5 mA, V
CC
= V
CC
Min.
2.4
V
V
OH2
I
OH
= –100 μA
V
CC
– 0.4
V
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
相關(guān)PDF資料
PDF描述
MBM29F400BC-90 Replaced by TPS2043B : 0.7A, 2.7-5.5V Triple (2In/3Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 16-SOIC 0 to 85
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