參數(shù)資料
型號(hào): MBM29LV001TC-70PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 1M (128K x 8) BIT
中文描述: 128K X 8 FLASH 3V PROM, 70 ns, PDSO32
封裝: PLASTIC, TSOP1-32
文件頁數(shù): 4/49頁
文件大?。?/td> 421K
代理商: MBM29LV001TC-70PFTN
MBM29LV001TC
-55/-70
/MBM29LV001BC
-55/-70
4
I
FLEXIBLE SECTOR-ERASE ARCHITECTURE
One 8K byte, two 4K bytes, and seven 16K bytes.
Individual-sector, multiple-sector, or bulk-erase capability.
Individual or multiple-sector protection is user definable.
Device is available in top or bottom boot sector architecture.
00000H to 03FFFH
04000H to 07FFFH
08000H to 0BFFFH
0C000H to 0FFFFH
10000H to 13FFFH
14000H to 17FFFH
18000H to 1BFFFH
1C000H to 1CFFFH
1D000H to 1DFFFH
1E000H to 1FFFFH
00000H to 00000H
16K byte
16K byte
16K byte
16K byte
16K byte
16K byte
16K byte
4K byte
4K byte
8K byte
MBM29LV001TC Top Boot
Sector Architecture
00000H to 01FFFH
02000H to 02FFFH
03000H to 03FFFH
04000H to 07FFFH
08000H to 0BFFFH
0C000H to 0FFFFH
10000H to 13FFFH
14000H to 17FFFH
18000H to 1BFFFH
1C000H to 1FFFFH
00000H to 00000H
MBM29LV001BC Bottpm Boot
Sector Architecture
(
×
8)
(
×
8)
8K byte
4K byte
4K byte
16K byte
16K byte
16K byte
16K byte
16K byte
16K byte
16K byte
相關(guān)PDF資料
PDF描述
MBM29LV001TC-70PFTR 1M (128K x 8) BIT
MBM29LV002BC 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
MBM29LV002BC-12 TIP REPLACEMENT .125 800 DEG
MBM29LV002BC-12PNS 2M (256K x 8) BIT
MBM29LV002BC-12PTN 2M (256K x 8) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV001TC-70PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1M (128K x 8) BIT
MBM29LV002BC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT
MBM29LV002BC-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT
MBM29LV002BC-12PNS 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT
MBM29LV002BC-12PTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT