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參數(shù)資料
| 型號(hào)： | MBM29LV002 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 2 M SON Packages Flash Memory(CMOS 2M 小外形封裝閃速存儲(chǔ)器) |
| 中文描述： | 2米的CMOS封裝閃存兒子的CMOS（200萬小外形封裝閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 132K |
| 代理商： | MBM29LV002 |
DS05-20830-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
SON PACKAGES
MBM29F017/MBM29LV002/MBM29LV004/MBM29LV400/
MBM29LV080/MBM29LV008/MBM29LV800
I
GENERAL DESCRIPTION
SON (Small Outline Non-lead) packages are chip size packages developed by Fujitsu. Not only can SON packages
be mounted by the surface mounting technology of TSOP (Thin Small Outline Package), but they are also smaller
and thinner than TSOP.
Flash memory is non-volatile semiconductor can hold data even if the power supply is removed OFF, and is used
widely for data storage shownby memory card and modules, and other handy application such as portable phone.
We have prepared chip size package in response to the trend towards downsized products in these fields.
This Data Sheet introduces the SON package product lineup, and lists only pin assignment, packege dimensions,
and pin capacitance. All specifications excepts for pin capacitance are the same specification as SOP and TSOP
Packages mounted Fujitsu Flash Memory. For more detail, please refer to the data sheets on Fujitsu flash memory,
listed below.
I
FLASH MEMORY SON PACKAGES
*1: Address Don’t Care products during programming (for filing)
*2: 4.75 V to 5.25 V at 90 ns
4.5 V to 5.5 V at 120 ns
*3: 3.0 V to 3.6 V at 100 ns
2.7 V to 3.6 V at 120 ns
*4: 16 KB, 8 KB
×
2, 32 KB, others 64 KB
WARNING:
Permanent device damage may occur if the above
Functional operation should be restricted to the conditions as detailed in the operational sections of this
data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
Absolute Maximum Ratings
are exceeded.
Part No.
Supply
Voltage
4.5 V to 5.5 V*
Density
Organization
Access
Time (ns)
90/120
Sector
Erase Size
64 KB
Number
of Pin
40
40
40/46
MBM29F017*
MBM29LV002T/B
MBM29LV004T/B
MBM29LV400T/B
MBM29LV080*
MBM29LV008T/B
MBM29LV800T/B
1
2
16 M
2 M
×
8
2.7 V to 3.6 V*
3
×
8
100/120
Boot type*
4
4 M
×
8/16
×
8
×
8
8/16
46
1
8 M
64 KB
Boot type*
4
×
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29LV008 | CMOS 8M SON Packages Flash Memory(CMOS 8M小外形封裝閃存) |
| MBM29F017 | CMOS 16 M SON Packages Flash Memory(CMOS 16M小外形封裝閃存) |
| MBM29LV008B-X | CMOS 8M (1M ×8) Flash Memory(CMOS 8M (1M ×8)位3V單電源 閃速存儲(chǔ)器) |
| MBM29LV008T-X | CMOS 8M (1M ×8) Flash Memory(CMOS 8M (1M ×8)位3V單電源 閃速存儲(chǔ)器) |
| MBM29LV008BA | 8M (1M X 8) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV002BC | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002BC-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002BC-12PNS | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002BC-12PTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002BC-12PTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
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