參數(shù)資料
型號: MBM29LV002TC-12PNS
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 2M (256K x 8) BIT
中文描述: 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
封裝: PLASTIC, SON-40
文件頁數(shù): 16/52頁
文件大?。?/td> 436K
代理商: MBM29LV002TC-12PNS
MBM29LV002TC
-70/-90/-12
/MBM29LV002BC
-70/-90/-12
16
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A
9
to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read
cycle from address XX01H returns the device code (MBM29LV002TC = 40H and MBM29LV002BC = C2H). (See
Tables 3.1 and 3.2.) All manufacturer and device codes will exhibit odd parity with DQ
7
defined as the parity bit.
Sector state (protection or unprotection) will be informed by address XX02H.
Scanning the sector addresses (A
17
, A
16
, A
15
, A
14
, and A
13
) while (A
10
, A
6
, A
1
, A
0
) = (0, 0, 1, 0) will produce a
logical “1” at device output DQ
0
for a protected sector. The programming verification should be perform margin
mode on the protected sector. (See Tables 2 and 3.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command
sequence.
Byte Programming
The devices are programmed on a byte-by-byte basis. Programming is a four bus cycle operation. There are
two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses
are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge
of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins
programming. Upon executing the Embedded Program Algorithm command sequence, the system is not required
to provide further controls or timings. The device will automatically provide adequate internally generated
program pulses and verify the programmed cell margin.
The automatic programming operation is completed when the data on DQ
7
is equivalent to data written to this
bit at which time the devices return to the read mode and addresses are no longer latched. (See Table 8, Hardware
Sequence Flags.) Therefore, the devices require that a valid address to the devices be supplied by the system
at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being
programmed.
Any commands written to the chip during this period will be ignored. If hardware reset occurs during the
programming operation, it is impossible to guarantee the data are being written.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success
according to the data polling algorithm but a read from read/reset mode will show that the data is still “0”. Only
erase operations can convert “0”s to “1”s.
Figure 17 illustrates the Embedded Program
TM
Algorithm using typical command strings and bus operations.
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MBM29LV002TC-12PTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT
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MBM29LV002TC-70PTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT