參數(shù)資料
型號: MBM29LV004BC-12PTR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 4M (512K X 8) BIT
中文描述: 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
封裝: PLASTIC, REVERSE, TSOP1-40
文件頁數(shù): 34/52頁
文件大小: 442K
代理商: MBM29LV004BC-12PTR
MBM29LV004TC
-70/-90/-12
/MBM29LV004BC
-70/-90/-12
34
t
CP
t
DS
t
WHWH1
t
WC
t
AH
WE
OE
Addresses
Data
t
AS
t
CPH
t
DH
DQ
7
A0H
D
OUT
CE
555H
PA
PA
Data Polling
3rd Bus Cycle
t
WS
t
WH
t
GHEL
PD
Figure 7 AC Waveforms for Alternate CE Controlled Program Operations
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
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