參數(shù)資料
型號: MBM29LV016T-80PTR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 16M (2M x 8) BIT
中文描述: 2M X 8 FLASH 3V PROM, 80 ns, PDSO40
封裝: PLASTIC, REVERSE, TSOP1-40
文件頁數(shù): 50/52頁
文件大?。?/td> 600K
代理商: MBM29LV016T-80PTR
50
MBM29LV016T
-80/-90/-12
/MBM29LV016B
-80/-90/-12
I
ERASE AND PROGRAMMING PERFORMANCE
I
TSOP (I) PIN CAPACITANCE
Note:
Test conditions T
A
= 25°C, f = 1.0 MHz
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
1
10
sec
Excludes programming time
prior to erasure
Byte Programming Time
8
300
μs
Excludes system-level
overhead
Chip Programming Time
16.8
50
sec
Excludes system-level
overhead
Erase/Program Cycle
100,000
cycles
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
TBD
TBD
pF
C
OUT
Output Capacitance
V
OUT
= 0
TBD
TBD
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TBD
TBD
pF
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