參數(shù)資料
型號(hào)： MBM29LV017-80PBT
廠商： FUJITSU LTD
元件分類(lèi)： DRAM
英文描述： Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3124; No. of Contacts:61; Connector Shell Size:24; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle RoHS Compliant: No
中文描述： 2M X 8 FLASH 3V PROM, 80 ns, PBGA48
封裝： PLASTIC, FBGA-48
文件頁(yè)數(shù)： 24/52頁(yè)
文件大?。?/td> 600K
代理商： MBM29LV017-80PBT
24
MBM29LV017
-80/-90/-12
Table 9 MBM29LV017 Common Flash Interface Code
Description
A
0
to A
6
10H
11H
12H
13H
DQ
0
to DQ
7
51H
52H
59H
02H
Description
A
0
to A
6
2DH
2EH
2FH
30H
DQ
0
to DQ
7
00H
00H
40H
00H
Query-unique ASCII string
“QRY”
Erase Block Region 1
Information
Primary OEM Command
Set
02h:AMD/FJ standard type
Address for Primary
Extended Table
14H
00H
Erase Block Region 2
Information
31H
01H
15H
16H
17H
18H
19H
1AH
40H
00H
00H
00H
00H
00H
32H
33H
34H
35H
36H
37H
38H
39H
3AH
3BH
3CH
40H
41H
42H
00H
20H
00H
00H
00H
80H
00H
1EH
00H
00H
01H
50H
52H
49H
Alternate OEM Command
Set (00H = not applicable)
Erase Block Region 3
Information
Address for Alternate OEM
Extended Table
V
CC
Min. (write/erase)
D
7
to D
4
: volt
D
3
to D
0
: 100 m volt
1BH
27H
Erase Block Region 4
Information
V
CC
Max. (write/erase)
D
7
to D
4
: volt
D
3
to D
0
: 100 m volt
1CH
36H
Query-unique ASCII string
“PRI”
V
PP
Min. voltage
V
PP
Max. voltage
Typical time-out per single
byte/word write 2
N
μ
s
Typical time-out for Min. size
buffer write 2
N
μ
s
Typical time-out per
individual block erase 2
N
ms
Typical time-out for full chip
erase 2
N
ms
Max. time-out for byte/word
write 2
N
times typical
Max. time-out for buffer
write 2
N
times typical
Max. time-out per individual
block erase 2
N
times typical
Max. time-out for full chip
erase 2
N
times typical
1DH
1EH
00H
00H
1FH
04H
Major version number,
ASCII
Minor version number,
ASCII
Address Sensitive Unlock
0 = Required
1 = Not Required
Erase Suspend
0 = Not Supported
1 = To Read Only
2 = To Read & Write
Sector Protection
0 = Not Supported
X = Number of sectors in
per group
Sector Temporary
Unprotection
00 = Not Supported
01 = Supported
43H
31H
20H
00H
44H
30H
21H
0AH
45H
00H
22H
00H
46H
02H
23H
05H
24H
00H
47H
01H
25H
04H
26H
00H
48H
01H
Device size = 2
N
byte
27H
15H
Flash Device Interface
description
28H
29H
2AH
2BH
00H
00H
00H
00H
Reserve
49H
4AH
4BH
4CH
XXH
XXH
XXH
XXH
Max. number of byte in
multi-byte write = 2
N
Number of Erase Block
Regions within device
2CH
04H
相關(guān)PDF資料
PDF描述
MBM29LV017-80PBT-SF2 PTSE 6C 6#20 PIN RECP
MBM29LV017-90 16M (2M X 8) BIT
MBM29LV080-10 8M (1M ×8) Bit Flash Memory(8M (1M ×8)位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV080-12 8M (1M ×8) Bit Flash Memory(8M (1M ×8)位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV080-15 8M (1M ×8) Bit Flash Memory(8M (1M ×8)位 單5V 電源電壓閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV017-80PBT-SF2 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
MBM29LV017-80PTN 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
MBM29LV017-80PTR 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
MBM29LV017-90 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
MBM29LV017-90PBT 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
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