參數(shù)資料
型號: MBM29LV080A-12PTR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 8M (1M x 8) BIT
中文描述: 1M X 8 FLASH 3V PROM, 120 ns, PDSO40
封裝: PLASTIC, REVERSE, TSOP1-40
文件頁數(shù): 21/49頁
文件大?。?/td> 400K
代理商: MBM29LV080A-12PTR
MBM29LV080A
-70/-90/-12
21
Data Protection
The MBM29LV080A is designed to offer protection against accidental erasure or programming caused by spu-
rious system level signals that may exist during power transitions. During power up the device automatically
resets the internal state machine in the Read mode. Also, with its control register architecture, alteration of the
memory contents only occurs after successful completion of specific multi-bus cycle command sequences.
The devices also incorporates several features to prevent inadvertent write cycles resulting form V
CC
power-up
and power-down transitions or system noise.
Low V
CC
Write Inhibit
To avoid initiation of a write cycle during V
CC
power-up and power-down, a write cycle is locked out for V
CC
less
than 2.3 V (typically 2.4 V). If V
CC
< V
LKO
, the command register is disabled and all internal program/erase circuits
are disabled. Under this condition the device will reset to the Read mode. Subsequent writes will be ignored
until the V
CC
level is greater than V
LKO
. It is the users responsibility to ensure that the control pins are logically
correct to prevent unintentional writes when V
CC
is above 2.3 V.
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = V
IL
, CE = V
IH
, or WE = V
IH
. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
Power-up Write Inhibit
Power-up of the device with WE = CE = V
IL
and OE = V
IH
will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the read mode on power-up.
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