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參數(shù)資料
| 型號： | MBM29LV160BE90TR |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 16M (2M X 8/1M X 16) BIT |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | PLASTIC, REVERSE, TSOP1-48 |
| 文件頁數(shù)： | 2/59頁 |
| 文件大?。?/td> | 653K |
| 代理商： | MBM29LV160BE90TR |
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MBM29LV160TE/BE
-70/90/12
2
(Continued)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.
The device features single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
comleted, the device internally resets to the read mode.
The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em-
bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then
reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset
occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically
reset to the read mode and will have erroneous data stored in the address locations being programmed or
erased. These locations need re-writing after the Reset. Resetting the device enables the system’s micropro-
cessor to read the boot-up firmware from the Flash memory.
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
* :
I
PACKAGES
48-pin plastic TSOP (I)
(FPT-48P-M19)
48-pin plastic CSOP
(LCC-48P-M03)
48-pin plastic TSOP (I)
(FPT-48P-M20)
48-pin plastic FBGA
(BGA-48P-M11)
Marking Side
Marking Side
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
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| MBM29LV160B | Low power audio DAC |
| MBM29LV160T-12 | CONNECTOR ACCESSORY |
| MBM29LV160T-12PBT | CONNECTOR ACCESSORY |
| MBM29LV160B-90PCV | 16M (2M xⅴ 8/1M x 16) BIT |
| MBM29LV160T-90PCV | 16M (2M xⅴ 8/1M x 16) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV160BM90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM |
| MBM29LV160BM90TN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM |
| MBM29LV160T | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT |
| MBM29LV160T-12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT |
| MBM29LV160T-12PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT |
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